IPI70N04S406AKSA1

Single FETs, MOSFETs Overview

The IPI70N04S4-06 is an N-channel enhancement mode OptiMOS-T2 power transistor designed for automotive applications. It features a PG-TO262-3-1 package and supports a maximum drain-source voltage of 40 V. The device delivers a continuous drain current of 70 A at 25°C case temperature, with a pulsed current capability of 280 A. Key electrical parameters include a maximum on-state resistance of 6.2 mΩ at VGS=10V and a total gate charge of 32 nC. Thermal performance is characterized by a junction-to-case thermal resistance of 2.6 K/W, allowing operation up to 175°C.

Single FETs, MOSFETs Feature Summary

• AEC-Q101 qualified for automotive reliability standards
• OptiMOS-T2 technology providing low on-state resistance
• 100% avalanche tested for robustness
• RoHS compliant green product design

Single FETs, MOSFETs Applications

• Automotive power switching circuits
• Low-side load switching applications
• DC-DC converter stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required package variant, as the datasheet covers multiple part numbers sharing the same core die characteristics. Confirm that the component meets the necessary automotive qualification standards for your specific application environment. Ensure proper handling procedures are followed due to the sensitivity of the semiconductor junctions during installation.

Single FETs, MOSFETs Selection Notes

Select this component when a 40 V rating and high current capacity are required in a TO-262 form factor. Consider the thermal resistance values to ensure adequate heat sinking for continuous operation. Evaluate the gate charge requirements against your driver capabilities to optimize switching speeds and minimize losses in the target circuit design.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon OptiMOS-T2 family, which utilizes trench gate technology to achieve low conduction losses. The IPI70N04S4-06 shares its internal specifications with the IPB70N04S4-06 and IPP70N04S4-06, differing only in the external leaded package configuration. This family is engineered for high efficiency in automotive power management systems.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include IPB70N04S4-06 (PG-TO263-3-2) and IPP70N04S4-06 (PG-TO220-3-1). Verify pinout compatibility and mechanical footprint differences before substitution.