IPLK80R1K4P7ATMA1

Single FETs, MOSFETs Overview

The IPLK80R1K4P7 is an N-channel 800V CoolMOS P7 power MOSFET in a ThinPAK 5x6 SMD package. Key parameters include a maximum drain-source voltage (VDS) of 800 V, a continuous drain current (ID) of 4 A at 25°C case temperature, and a maximum on-state resistance (RDS(on)) of 1.4 Ω at VGS=10V. The typical gate charge (Qg) is 10 nC with a threshold voltage (VGS(th)) of 3 V. It features a Kelvin source pin for optimized switching performance.

Single FETs, MOSFETs Feature Summary

• Integrated Zener diode provides ESD protection to enhance production yield and reduce field returns.
• Kelvin source pin configuration enables easy driving and parallel operation by minimizing parasitic inductance effects.
• Optimized figure-of-merit (FOM) combining low RDS(on) and reduced output capacitance energy (Eoss).
• Tight threshold voltage variation of ±0.5 V ensures consistent switching behavior across devices.

Single FETs, MOSFETs Applications

• Hard and soft switching flyback topologies
• Low power chargers
• Adapters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code IPLK80R1K4P7 against the manufacturer's official datasheet revision history to ensure compatibility with current manufacturing standards. Confirm that the ThinPAK 5x6 package footprint matches the target PCB design, noting that source and sense pins are not interchangeable. Check for any updated qualification status regarding industrial applications before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage isolation with compact surface-mount packaging. The integrated Zener diode simplifies gate drive circuitry by offering inherent ESD protection. Ensure the thermal management strategy accounts for the junction-to-ambient thermal resistance when operating without significant copper cooling areas. Verify that the gate drive voltage aligns with the specified 10V test conditions for optimal RDS(on) performance.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's CoolMOS P7 series, representing advanced superjunction technology for 800V applications. It is designed to set benchmarks in performance and ease of use, leveraging over 18 years of superjunction innovation. The ThinPAK 5x6 package offers a smaller footprint compared to traditional DPAK packages while maintaining robust thermal characteristics for power density improvements.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's cross-reference documentation for verified substitutes within the CoolMOS P7 family or other 800V superjunction series. Ensure any replacement maintains the same package outline and pinout, particularly the distinct Kelvin source connection, to avoid redesigning the gate drive layout.