Single FETs, MOSFETs IPLK80R750P7ATMA1 product image

IPLK80R750P7ATMA1

$1.68
  • Description:MOSFET 800V TDSON-8
  • Series:CoolMOS™ P7
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:20c196212b4b Category: Brand:

  
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IPLK80R750P7ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 800V TDSON-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPLK80R750P7ATMA1

  • Description:MOSFET 800V TDSON-8
  • Series:CoolMOS™ P7
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:-
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):800 V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TDSON-8
  • Package / Case:8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for IPLK80R750P7ATMA1

IPLK80R750P7ATMA1

Single FETs, MOSFETs Overview

The IPLK80R750P7 is an N-channel power MOSFET from Infineon's CoolMOS P7 series, utilizing superjunction technology. It features a drain-source breakdown voltage of 800 V and a maximum on-state resistance of 0.75 Ω at 25°C. The device supports a continuous drain current of 7 A at 25°C case temperature and handles pulsed currents up to 17 A. Key electrical parameters include a typical gate charge of 17 nC, a threshold voltage of 3 V, and an avalanche energy rating of 16 mJ. It operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

  • Integrated Zener diode for ESD protection
  • Optimized thermal performance with low thermal resistance
  • Tight gate threshold voltage variation for parallel operation

Single FETs, MOSFETs Applications

  • Hard switching flyback topologies
  • Soft switching flyback topologies
  • Low power chargers
  • Adapters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code IPLK80R750P7 against official Infineon documentation to ensure correct package and marking details. Confirm that the ThinPAK 5x6 SMD footprint matches your PCB design constraints. Check for any recent revision updates in the datasheet regarding maximum operating temperatures or qualification standards before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high efficiency in 800V applications. The integrated ESD protection reduces production failures. Ensure the gate drive circuitry accommodates the 17 nC gate charge. Verify that the PCB layout supports the required thermal dissipation given the 62 °C/W junction-to-ambient thermal resistance on minimal footprints.

Single FETs, MOSFETs Part Context

This part belongs to the CoolMOS P7 family, which represents advanced superjunction technology for 800V applications. It is designed to offer best-in-class figure-of-merit (FOM) combining low RDS(on) and reduced output capacitance energy (Eoss). The ThinPAK 5x6 package provides a compact solution for surface-mount assembly compared to traditional DPAK packages.

Single FETs, MOSFETs Replacement Considerations

Consult Infineon's cross-reference tools for direct replacements. Consider parts like IPD80R750P7ATMA1 if DPAK packaging is acceptable, noting the package difference. Verify pinout compatibility and thermal characteristics carefully when substituting.

IPLK80R750P7ATMA1IPLK80R750P7ATMA1
$1.68
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