IPP052N08N5AKSA1

Single FETs, MOSFETs Overview

The IPP052N08N5 is an N-channel OptiMOS™ 5 power MOSFET rated for 80 V drain-source voltage. It features a maximum on-resistance of 5.2 mΩ at 10 V gate drive and supports continuous drain currents up to 80 A at 25 °C case temperature. The device utilizes a PG-TO220-3 package with a tab-connected drain pin. Key electrical parameters include a total gate charge of 42 nC, output charge of 51 nC, and a junction-to-case thermal resistance of 0.9 K/W. It operates within a temperature range of -55 °C to 175 °C.

Single FETs, MOSFETs Feature Summary

• Optimized figure of merit (FOM) combining low on-resistance and gate charge for high-frequency switching applications
• Designed specifically for synchronous rectification requirements
• Manufactured using lead-free plating and complies with RoHS standards
• Qualified according to JEDEC standards for target industrial applications

Single FETs, MOSFETs Applications

• High-frequency switching circuits
• Synchronous rectification stages
• Server power solutions
• Telecommunications infrastructure
• Switching mode power supplies (SMPS)

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix AKSA1 against official Infineon documentation to confirm packaging details and material content compliance. Ensure that the procurement channel provides valid traceability for the PG-TO220-3 package variant. Cross-reference the datasheet revision history to confirm the component status remains active and matches the required technical specifications for your design.

Single FETs, MOSFETs Selection Notes

Select this component when designing 80 V systems requiring robust avalanche energy handling and low conduction losses. The TO-220-3 package is suitable for through-hole mounting where higher current capacity is needed compared to surface-mount alternatives. Consider the thermal resistance characteristics and ensure adequate heatsinking or PCB copper area to maintain junction temperatures within the specified operating range during peak load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™ 5 family, which represents Infineon's fifth-generation technology for low-voltage power MOSFETs. The series focuses on improving efficiency in power conversion by reducing switching and conduction losses. The IPP052N08N5 specifically targets the 80 V segment, offering a balance between voltage rating and current handling capabilities for general-purpose power management applications.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include IPA052N08NM5S and IPB031N08N5ATMA1. Verify pinout compatibility and thermal performance differences before substitution. Ensure that any replacement maintains the same voltage rating and meets the required on-resistance specifications for the application.