IPP100N06S2L05AKSA1

Description：MOSFET N-CH 55V 100A TO220-3
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tube

SKU:e23dce5740d5 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPP100N06S2L05AKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 100A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPP100N06S2L05AKSA1

Description：MOSFET N-CH 55V 100A TO220-3
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：230 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5660 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：PG-TO220-3-1
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IPP100N06S2L05AKSA1

IPP100N06S2L05AKSA1

Single FETs, MOSFETs Overview

The IPP100N06S2L05AKSA1 is an N-channel OptiMOS Power-Transistor in a PG-TO220-3-1 package. It features a drain-source breakdown voltage of 55 V and a continuous drain current of 100 A at Tc=25°C. The maximum on-state resistance is 4.7 mΩ at Vgs=10V, with a gate threshold voltage ranging from 1.2 V to 2.0 V. Total gate charge is typically 170 nC. The device supports a power dissipation of 300 W, operates between -55°C and +175°C, and is qualified under AEC-Q101 standards.

Single FETs, MOSFETs Feature Summary

Automotive AEC-Q101 qualification for reliable operation in demanding environments
Logic-level enhancement mode operation enabling direct drive compatibility
Ultra-low on-state resistance optimized for high-efficiency conduction
100% avalanche tested to ensure robustness against transient energy events

Single FETs, MOSFETs Applications

Automotive power distribution systems
High-current DC-DC converter stages
Motor control applications requiring logic-level gating

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code suffix against official Infineon documentation to confirm exact package and marking variations. Confirm that the component meets the required automotive qualification standards for your specific application environment before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when high current handling and low conduction losses are critical. Ensure the thermal management design accommodates the specified junction-to-case thermal resistance. Verify that the logic-level gate drive requirements align with the system's available control voltages.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS Power-Transistor family, designed for high-performance switching applications. It utilizes advanced silicon technology to achieve superior figure-of-merit characteristics compared to standard MOSFETs, specifically targeting automotive and industrial power electronics markets.