IPP60R099CPXKSA1

Single FETs, MOSFETs Overview

The IPP60R099CPXKSA1 is a single N-Channel CoolMOS CP power MOSFET manufactured by Infineon Technologies. It features a 600 V drain-source voltage (Vds) and a continuous drain current (Id) of 31 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 99 mΩ at 25°C. It utilizes a TO-220-3 through-hole package with a power dissipation rating of 255 W. Key electrical parameters include a gate charge (Qg) of 80 nC, a threshold voltage (Vgs(th)) range of 2.5 V to 4.5 V, and a maximum operating junction temperature of +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes CoolMOS CP technology for optimized switching performance and low conduction losses.
• Designed for high-voltage applications with a 600 V breakdown capability.
• Features a robust TO-220-3 through-hole package suitable for thermal management.

Single FETs, MOSFETs Applications

• High-frequency power supplies
• Uninterruptible power supply (UPS) systems
• DC-to-AC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'XKSA1' against official Infineon documentation to confirm packaging details and RoHS compliance status. Confirm that the component meets all required environmental standards for the intended application before procurement. Ensure the ordering part number matches the exact datasheet revision to avoid discrepancies in electrical characteristics or pinout configurations.

Single FETs, MOSFETs Selection Notes

Select this component when a 600 V N-Channel MOSFET with approximately 100 mΩ on-resistance is required in a TO-220-3 package. Consider the 31 A current rating and 255 W power dissipation capabilities relative to the thermal design constraints. Evaluate the gate charge and switching speeds against the specific frequency requirements of the target power conversion topology.

Single FETs, MOSFETs Part Context

This part belongs to the CoolMOS CP series from Infineon Technologies, designed for general-purpose high-voltage switching applications. It represents an evolution in superjunction MOSFET technology aimed at improving efficiency in power conversion systems. The TO-220-3 form factor provides a balance between performance and ease of integration into standard through-hole PCB layouts.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon cross-reference tools for verified alternatives.