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IPT65R125CFD7XTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is HIGH POWER_NEW. Review the specifications below when checking this part for your BOM.
The Infineon Technologies IPT65R125CFD7XTMA1 is a 650V CoolMOS CFD7 SJ Power MOSFET in PG-HSOF-8 package. It features a maximum drain-source on-state resistance of 125 mΩ, a typical gate charge of 32 nC, and a pulsed drain current of 66 A. The device has a breakdown voltage of 650 V, a body diode reverse recovery time of 105 ns, and an effective output capacitance energy of 5.0 µJ at 400 V.
Verify the specific XTMA1 suffix against the official datasheet to confirm packaging details and tape-and-reel specifications. Ensure the ordering code matches the exact thermal and electrical requirements for your PCB footprint. Confirm JEDEC industrial qualification status if required for your application environment.
Select this component for designs requiring high efficiency in soft-switching applications like LLC or phase-shift full-bridge converters. The low gate charge and fast body diode make it suitable for high-frequency operation. Consider the PG-HSOF-8 package size and thermal resistance when designing the heat dissipation strategy.
This part belongs to the Infineon CoolMOS CFD7 family, which extends the 650V offering as a successor to the CFD2 series. It is designed for high power density solutions and meets highest efficiency standards. The technology blends fast switching with superior hard commutation robustness.
The datasheet identifies the IPT65R125CFD7 as a successor to the 650V CoolMOS CFD2 family. Verify pinout compatibility and thermal characteristics before substituting older CFD2 variants.
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