Single FETs, MOSFETs IPT65R125CFD7XTMA1 product image

IPT65R125CFD7XTMA1

$3.76
  • Description:HIGH POWER_NEW
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:b607a0cc3d2d Category: Brand:

  
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IPT65R125CFD7XTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is HIGH POWER_NEW. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPT65R125CFD7XTMA1

  • Description:HIGH POWER_NEW
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-HSOF-8-3
  • Package / Case:8-PowerSFN

Single FETs, MOSFETs datasheet and documents for IPT65R125CFD7XTMA1

IPT65R125CFD7XTMA1

Single FETs, MOSFETs Overview

The Infineon Technologies IPT65R125CFD7XTMA1 is a 650V CoolMOS CFD7 SJ Power MOSFET in PG-HSOF-8 package. It features a maximum drain-source on-state resistance of 125 mΩ, a typical gate charge of 32 nC, and a pulsed drain current of 66 A. The device has a breakdown voltage of 650 V, a body diode reverse recovery time of 105 ns, and an effective output capacitance energy of 5.0 µJ at 400 V.

Single FETs, MOSFETs Feature Summary

  • Ultra-fast body diode with high commutation speed
  • Best-in-class RDS(on) with low temperature dependency
  • Reduced switching losses for resonant topologies
  • Excellent hard commutation ruggedness

Single FETs, MOSFETs Applications

  • Phase-shift full-bridge (ZVS)
  • LLC resonant converters
  • Server power supplies
  • Telecom power systems
  • EV charging infrastructure

Single FETs, MOSFETs Procurement Notes

Verify the specific XTMA1 suffix against the official datasheet to confirm packaging details and tape-and-reel specifications. Ensure the ordering code matches the exact thermal and electrical requirements for your PCB footprint. Confirm JEDEC industrial qualification status if required for your application environment.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high efficiency in soft-switching applications like LLC or phase-shift full-bridge converters. The low gate charge and fast body diode make it suitable for high-frequency operation. Consider the PG-HSOF-8 package size and thermal resistance when designing the heat dissipation strategy.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon CoolMOS CFD7 family, which extends the 650V offering as a successor to the CFD2 series. It is designed for high power density solutions and meets highest efficiency standards. The technology blends fast switching with superior hard commutation robustness.

Single FETs, MOSFETs Replacement Considerations

The datasheet identifies the IPT65R125CFD7 as a successor to the 650V CoolMOS CFD2 family. Verify pinout compatibility and thermal characteristics before substituting older CFD2 variants.

IPT65R125CFD7XTMA1IPT65R125CFD7XTMA1
$3.76
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