IPTG029N13NM6ATMA1

$5.60

Description：TRENCH >=100V
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ae3bc50818d3 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPTG029N13NM6ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH >=100V. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPTG029N13NM6ATMA1

Description：TRENCH >=100V
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for IPTG029N13NM6ATMA1

IPTG029N13NM6ATMA1

Single FETs, MOSFETs Overview

The IPTG029N13NM6ATMA1 is an OptiMOS™ 6 power transistor featuring a 135 V drain-source breakdown voltage and a maximum on-resistance of 2.9 mΩ at VGS=10V. It supports a continuous drain current of 212 A and a pulsed current of 848 A in the PG-HSOG-8 package. Key dynamic parameters include a total gate charge of 104 nC, output charge of 180 nC, and reverse recovery charge of 118 nC. The device operates within a temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Optimized for motor drives and battery-powered applications
Features very low on-resistance and excellent figure of merit
Includes 100% avalanche testing for enhanced reliability
Fully qualified according to JEDEC standards for industrial applications

Single FETs, MOSFETs Applications

Motor drives
Battery powered applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure that the PG-HSOG-8 footprint matches the target PCB design constraints. Confirm RoHS compliance and halogen-free status requirements align with project specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing systems requiring high efficiency in the 135 V voltage class. The low RDS(on) and optimized gate charge make it suitable for synchronous rectification and hard-switching topologies. Evaluate thermal management capabilities based on the specified junction-to-case resistance values for the intended operating environment.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™ 6 family of N-channel power MOSFETs from Infineon Technologies. These transistors utilize advanced silicon technology to deliver superior performance metrics compared to previous generations. The family targets industrial and automotive sectors demanding high reliability and energy efficiency in power conversion stages.