IPW60R031CFD7XKSA1

$8.97

Description：MOSFET N-CH 650V 63A TO247-3
Series：CoolMOS™ CFD7
Mfr：Infineon Technologies
Package：Tube

SKU:5196f359f1f2 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPW60R031CFD7XKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 650V 63A TO247-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPW60R031CFD7XKSA1

Description：MOSFET N-CH 650V 63A TO247-3
Series：CoolMOS™ CFD7
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：31mOhm @ 32.6A, 10V
Vgs(th) (Max) @ Id：4.5V @ 1.63mA
Gate Charge (Qg) (Max) @ Vgs：141 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5623 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：278W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PG-TO247-3
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for IPW60R031CFD7XKSA1

IPW60R031CFD7XKSA1

Single FETs, MOSFETs Overview

The IPW60R031CFD7XKSA1 is a 600V CoolMOS CFD7 N-channel power MOSFET in a PG-TO-247-3 package. It features a maximum drain-source breakdown voltage of 650V and a typical gate charge of 141nC. The device supports a pulsed drain current of 277A and has an effective output capacitance energy (Eoss) of 16.3µJ at 400V. Its body diode exhibits a reverse recovery charge of 0.96µC and a maximum commutation speed of 1300A/µs.

Single FETs, MOSFETs Feature Summary

Ultra-fast body diode with best-in-class reverse recovery charge
Low gate charge for optimized soft-switching performance
Improved MOSFET reverse diode dv/dt and diF/dt ruggedness
Lowest figure of merit RDS(on)*Qg and RDS(on)*Eoss

Single FETs, MOSFETs Applications

Phase-shift full-bridge (ZVS) applications
LLC resonant converter topologies
Server power supplies
Telecommunications power systems
EV charging infrastructure

Single FETs, MOSFETs Procurement Notes

Verify the component against the official Infineon datasheet to confirm the specific CFD7 generation and TO-247-3 package configuration. Ensure that the ordering suffix matches the required tube packaging format. Cross-reference the manufacturer part number directly with authorized distributors to validate authenticity and traceability before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency resonant switching topologies requiring low gate charge and fast body diode characteristics. Evaluate the thermal resistance and junction temperature limits to ensure adequate heat dissipation. Consider the avalanche energy ratings and hard commutation ruggedness when designing circuits subject to transient overloads or inductive load switching.

Single FETs, MOSFETs Part Context

This transistor belongs to the CoolMOS CFD7 series, which represents an optimized platform succeeding the CFD2 generation. Designed specifically for soft-switching applications, it integrates superjunction technology with a fast body diode portfolio. The series targets high power density solutions by balancing efficiency, reliability, and ease of implementation in advanced power conversion designs.