Single FETs, MOSFETs IQE004NE1LM7SCATMA1 product image

IQE004NE1LM7SCATMA1

$1.96
  • Description:TRENCH <= 40V
  • Series:OptiMOS™ 7
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:41ebceee2bce Category: Brand:

  
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IQE004NE1LM7SCATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IQE004NE1LM7SCATMA1

  • Description:TRENCH <= 40V
  • Series:OptiMOS™ 7
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):15 V
  • Current - Continuous Drain (Id) @ 25°C:58A (Ta), 379A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 7V
  • Rds On (Max) @ Id, Vgs:0.45mOhm @ 30A, 7V
  • Vgs(th) (Max) @ Id:2V @ 432µA
  • Gate Charge (Qg) (Max) @ Vgs:55 nC @ 7 V
  • Vgs (Max):±7V
  • Input Capacitance (Ciss) (Max) @ Vds:6240 pF @ 7.5 V
  • FET Feature:-
  • Power Dissipation (Max):2.1W (Ta), 89W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-WHSON-8
  • Package / Case:8-PowerWDFN

Single FETs, MOSFETs datasheet and documents for IQE004NE1LM7SCATMA1

IQE004NE1LM7SCATMA1

Single FETs, MOSFETs Overview

The IQE004NE1LM7SCATMA1 is an OptiMOS™ 7 N-channel power MOSFET with a 15 V drain-source breakdown voltage. It features a maximum on-resistance of 0.45 mΩ at VGS=7V and ID=30A, supporting a continuous drain current of 379 A at TC=25°C. The device operates within a junction temperature range of -55°C to +150°C and offers a thermal resistance (junction-to-case) of 1.4 °C/W. Key dynamic parameters include a total gate charge of 29 nC and an output charge of 27 nC.

Single FETs, MOSFETs Feature Summary

  • Logic-level N-channel architecture optimized for synchronous rectification in high-performance SMPS applications
  • Superior thermal performance enabled by the PG-WHSON-8 package design
  • 100% avalanche tested for enhanced ruggedness and reliability

Single FETs, MOSFETs Applications

  • Synchronous rectification in high-performance switching mode power supplies
  • Industrial applications requiring full qualification according to JEDEC standards

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm packaging details such as reel or cut tape specifications. Ensure that the component meets RoHS compliance and halogen-free requirements as defined in the datasheet before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage, high-current applications where minimal conduction losses are critical. The logic-level gate drive capability allows for efficient control using standard voltage levels. Consider the thermal resistance characteristics when designing heat dissipation strategies for the target PCB layout.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™ 7 family from Infineon Technologies, designed for low-voltage power switching. It utilizes silicon technology and is housed in a surface-mount PG-WHSON-8 package. The series focuses on balancing low on-resistance with robust thermal management capabilities.

Single FETs, MOSFETs Replacement Considerations

Check for alternative parts within the same OptiMOS™ 7 family or other Infineon low-voltage MOSFETs that match the 15 V rating and PG-WHSON-8 footprint. Verify pinout compatibility and electrical parameter equivalence before substitution.

IQE004NE1LM7SCATMA1IQE004NE1LM7SCATMA1
$1.96
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