IQE220N15NM5CGATMA1

$2.39

Description：TRENCH >=100V
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9fc2787af46e Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IQE220N15NM5CGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH >=100V. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IQE220N15NM5CGATMA1

Description：TRENCH >=100V
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：22mOhm @ 16A, 10V
Vgs(th) (Max) @ Id：4.6V @ 46µA
Gate Charge (Qg) (Max) @ Vgs：18.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 75 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 100W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TTFN-9-3
Package / Case：9-PowerTDFN

Single FETs, MOSFETs datasheet and documents for IQE220N15NM5CGATMA1

IQE220N15NM5CGATMA1

Single FETs, MOSFETs Overview

The IQE220N15NM5CGATMA1 is an N-channel OptiMOS 5 power transistor with a 150 V drain-source breakdown voltage. It features a maximum on-state resistance of 22 mΩ and supports a continuous drain current of 44 A at 25 °C case temperature. The device utilizes a PG-TTFN-9-3 package, measuring 3.3 x 3.3 mm, with source-down center-gate configuration. Key dynamic parameters include a total gate charge of 14.6 nC and an output charge of 40 nC. It operates within a junction temperature range of -55 °C to 175 °C.

Single FETs, MOSFETs Feature Summary

Superior thermal resistance for efficient heat dissipation
Optimized for high-performance synchronous rectification in SMPS applications
100% avalanche tested for enhanced ruggedness

Single FETs, MOSFETs Applications

Synchronous rectification in switching mode power supplies
Industrial DC-DC converters
Point-of-load regulation modules

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against the manufacturer's official documentation to confirm packaging details such as reel size or tape specifications. Ensure that the component meets all relevant industrial qualification standards required for the target application environment before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a low-profile surface-mount solution is required for 150 V applications. The PQFN 3.3x3.3 package offers a compact footprint suitable for space-constrained designs. Evaluate the thermal resistance characteristics against the system's cooling capabilities to ensure reliable operation under expected load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon OptiMOS 5 family, designed for low-voltage power switching. The IQE series specifically targets high-efficiency power conversion systems. The device integrates advanced silicon technology to minimize conduction losses while maintaining robust switching performance in industrial environments.