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IR2103STR is listed in the Gate Driver range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC GATE DRVR HALF-BRIDGE 8SOIC. Review the specifications below when checking this part for your BOM.
The IR2103STR is a high-voltage, fast power MOSFET and IGBT driver manufactured by Infineon Technologies. It features a half-bridge topology with two independent channels for driving high-side and low-side N-channel power devices. The device supports a maximum bootstrap voltage of 600 V and operates within a supply voltage range of 10 V to 20 V. It utilizes Silicon-on-Insulator (SOI) technology for functional level shifting, ensuring robust performance in noisy environments. The component is housed in an 8-pin SOIC surface-mount package.
Verify the specific suffix 'STR' indicates tape-and-reel packaging when sourcing. Confirm RoHS compliance status as legacy variants may differ. Check current production lifecycle status, as older revisions may be subject to obsolescence notices from Infineon. Ensure the supplier provides original manufacturer documentation to validate authenticity.
Select this component for applications requiring reliable isolation between control logic and high-voltage power stages without external transformers. The integrated bootstrap diode capability simplifies circuit design compared to discrete solutions. Consider the 600 V rating for medium-voltage AC motor drives or resonant converters where cost-effective isolation is critical.
This part belongs to the IR210x family of half-bridge drivers, widely used in power electronics. It serves as a foundational component for driving power switches in various industrial converters. The STR suffix specifically denotes the reel packaging format, distinguishing it from tube-packaged equivalents like the IR2103S.
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