IRF3610SPBF

Description：MOSFET N-CH 100V 103A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:91560ec9f345 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRF3610SPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 103A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF3610SPBF

Description：MOSFET N-CH 100V 103A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：103A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：11.6mOhm @ 62A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：150 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5380 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：333W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-3
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRF3610SPBF

IRF3610SPBF

Single FETs, MOSFETs Overview

The IRF3610SPbF is a HEXFET power MOSFET in a D2PAK package. It features a 100V drain-source breakdown voltage and a maximum continuous drain current of 103A at 25°C case temperature. The typical on-resistance is 9.3mΩ, with a maximum of 11.6mΩ at VGS=10V. Total gate charge is typically 100nC. Single pulse avalanche energy reaches 460mJ. Junction-to-case thermal resistance is 0.50°C/W. Operating junction temperature ranges from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Improved gate, avalanche, and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability

Single FETs, MOSFETs Applications

High efficiency synchronous rectification in SMPS
Uninterruptible power supply
High speed power switching
Hard switched and high frequency circuits

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including suffixes against official Infineon documentation to ensure correct packaging and lead-free status. Confirm that the specific revision matches your design requirements. Check for any recent product change notifications or lifecycle status updates directly from the manufacturer before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-resistance and high current handling within a 100V rating. Consider the thermal performance and safe operating area when designing heat dissipation solutions. Ensure gate drive voltages align with the specified threshold and total gate charge characteristics for optimal switching performance.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes silicon technology and is designed for robust performance in power conversion systems. The D2PAK package provides efficient thermal management for surface mount applications.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Ensure replacement parts match voltage, current, and thermal specifications.