IRF7401TRPBF

Single FETs, MOSFETs Overview

The IRF7401TRPBF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies, utilizing Generation V technology. It is housed in an SO-8 surface-mount package and features a maximum drain-source voltage of 20V. The device supports a continuous drain current of 8.7A at 25°C and offers a maximum on-resistance of 22mΩ at 4.5V gate drive. Key electrical characteristics include a typical gate charge of 32nC at 4.5V and a gate-drain charge of 13.3nC. Thermal performance is defined by a junction-to-ambient thermal resistance of 50 K/W, with a maximum operating junction temperature of 150°C.

Single FETs, MOSFETs Feature Summary

• Incorporates Generation V technology for optimized switching performance
• Features logic-level compatibility for efficient gate drive requirements
• Provides enhanced thermal stability through low thermal resistance design

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Power management systems
• Load switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm tape-and-reel packaging configuration. Ensure the component matches the required moisture sensitivity level and lead-free status specifications. Cross-reference the manufacturer part number with official Infineon documentation to validate authenticity and technical compliance before integration into production designs.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 20V N-channel MOSFET with moderate current handling capabilities. The low on-resistance and fast switching characteristics make it suitable for high-frequency power conversion. Evaluate thermal constraints based on the specified junction-to-ambient resistance and ensure the gate drive voltage aligns with the 4.5V threshold for optimal conduction efficiency.

Single FETs, MOSFETs Part Context

This component belongs to the HEXFET family of power MOSFETs from Infineon Technologies. The series is characterized by advanced silicon gate technology designed for high-efficiency power switching. The IRF7401 variant specifically targets low-voltage, medium-current applications where compact surface-mount packaging and reliable thermal performance are critical design factors.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference data for verified substitutes. Ensure any replacement maintains identical voltage ratings, current capacity, and package dimensions to preserve circuit integrity.