IRF740STRRPBF

$3.20

Description：MOSFET N-CH 400V 10A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0af3f288afc9 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRF740STRRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 400V 10A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF740STRRPBF

Description：MOSFET N-CH 400V 10A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：400 V
Current - Continuous Drain (Id) @ 25°C：10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：550mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：63 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRF740STRRPBF

IRF740STRRPBF

Single FETs, MOSFETs Overview

The IRF740STRRPBF is a Vishay Siliconix third-generation N-channel power MOSFET housed in a D2PAK (TO-263) surface-mount package. It features a drain-source voltage of 400 V, a continuous drain current of 10 A at 25 °C case temperature, and a maximum on-resistance of 0.55 Ω at VGS = 10 V. The device includes a total gate charge of 63 nC, an internal avalanche energy rating of 520 mJ, and a peak diode recovery dV/dt capability of 4.0 V/ns.

Single FETs, MOSFETs Feature Summary

Surface-mount construction in a D2PAK (TO-263) package designed for high-current applications with low internal connection resistance.
Repetitive avalanche rated to withstand unclamped inductive switching events without failure.
Dynamic dV/dt rating ensures robust performance during rapid voltage transitions across the drain-source terminals.
Fast switching characteristics combined with low on-resistance facilitate efficient operation in high-frequency circuits.

Single FETs, MOSFETs Applications

High-voltage switching applications requiring ruggedized device design
Power conversion systems utilizing fast switching capabilities
Circuits necessitating ease of paralleling multiple devices

Single FETs, MOSFETs Procurement Notes

Verify that the specific ordering suffix matches the required lead finish and packaging format. Confirm RoHS compliance status based on the exact part number variant. Ensure the procurement documentation references the correct datasheet revision to validate electrical parameters against the intended application requirements.

Single FETs, MOSFETs Selection Notes

Select this component when a surface-mount solution is required for high-voltage environments. Evaluate thermal management needs relative to the specified junction-to-case resistance. Consider the gate charge specifications for driver compatibility and switching frequency limitations within the target circuit topology.

Single FETs, MOSFETs Part Context

This device belongs to the IRF740S series of third-generation power MOSFETs from Vishay Siliconix. It utilizes silicon technology optimized for cost-effectiveness and performance. The product line emphasizes combining fast switching speeds with low on-resistance in standard surface-mount packages.