IRF7420TRPBF

$0.94

Description：MOSFET P-CH 12V 11.5A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f6b850779945 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRF7420TRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 12V 11.5A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF7420TRPBF

Description：MOSFET P-CH 12V 11.5A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：14mOhm @ 11.5A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：38 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：3529 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for IRF7420TRPBF

IRF7420TRPBF

Single FETs, MOSFETs Overview

The IRF7420TRPBF is a P-channel HEXFET power MOSFET in an SO-8 surface-mount package. It features a -12 V drain-source voltage rating and a continuous drain current of -11.5 A at 25°C, with a maximum on-resistance of 14 mΩ at VGS = -4.5V. The device supports a junction temperature range of -55 to +150 °C and offers a thermal resistance (RθJA) of 50 K/W. Total gate charge is typically 38 nC at VDS = -6V.

Single FETs, MOSFETs Feature Summary

Utilizes advanced processing techniques for extremely low on-resistance per silicon area.
Features a customized leadframe in the SO-8 package for enhanced thermal characteristics.
Supports multiple-die capability to reduce board space in power applications.

Single FETs, MOSFETs Applications

Battery management systems
Load management applications

Single FETs, MOSFETs Procurement Notes

Verify the component authenticity by checking the marking code against Infineon's official documentation. Confirm that the ordering suffix TRPBF corresponds to the tape and reel packaging format. Ensure the procurement source provides valid traceability records consistent with the manufacturer's quality standards.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a P-channel switch with a -12 V breakdown voltage. The SO-8 package is suitable for applications needing efficient heat dissipation through a customized leadframe. Consider the 14 mΩ on-resistance for minimizing conduction losses in battery-powered or load management designs.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It represents a P-channel enhancement mode device optimized for low on-resistance. The product line focuses on providing efficient switching solutions for consumer and industrial power applications using standard surface-mount packaging.