IRF7459

Single FETs, MOSFETs Overview

The IRF7459 is an N-Channel Power MOSFET from Infineon Technologies, designed for efficient switching applications. It features a drain-to-source voltage (VDS) of 20 V and a continuous drain current (ID) of 12 A at ambient temperature. The device is housed in an 8-SO surface-mount package with a thermal resistance capability supporting 2.5 W dissipation at ambient conditions. Key electrical parameters include a gate charge of 35 nC at 4.5 V and drive voltages optimized for low RDS(on) at 2.8 V and 10 V.

Single FETs, MOSFETs Feature Summary

• Ultra-low gate impedance for improved switching performance
• Very low RDS(on) at 4.5 V VGS for enhanced efficiency
• Fully characterized avalanche voltage and current capabilities

Single FETs, MOSFETs Applications

• Efficient switching applications
• Power management circuits requiring low gate impedance
• Systems utilizing fully characterized avalanche protection

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version and package marking when sourcing. Confirm that the 8-SO package matches your PCB footprint requirements. Ensure the component meets the required thermal dissipation specifications for your design, as the 2.5 W rating is based on ambient temperature conditions. Cross-reference the manufacturer part number to avoid counterfeit components.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 20 V N-Channel MOSFET with high current handling up to 12 A. Consider the ultra-low gate impedance if fast switching speeds are critical. Verify that the 8-SO package fits your assembly constraints. Evaluate the thermal performance against your system's heat dissipation capabilities, noting the ambient temperature dependency of the power rating.

Single FETs, MOSFETs Part Context

This component belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It is engineered for general-purpose power switching where efficiency and robustness are prioritized. The device integrates advanced silicon technology to minimize conduction losses while maintaining reliable operation under varying load conditions.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same voltage and current ratings. Ensure any substitute maintains similar gate charge and RDS(on) characteristics to preserve circuit timing and efficiency.