IRF7604TR

Single FETs, MOSFETs Overview

The IRF7604TR is a P-Channel Power MOSFET utilizing Fifth Generation HEXFET technology. It features an ultra-low on-resistance of 90 mΩ at VGS = -4.5V and a continuous drain current of -3.6A at 25°C. The device is housed in a Micro8 package, which offers a footprint half the size of standard SO-8 packages with a low profile under 1.1mm. Key electrical parameters include a drain-to-source breakdown voltage of -20V, a gate-to-source voltage limit of ±12V, and a power dissipation rating of 1.8W. Thermal resistance from junction to ambient is 70°C/W.

Single FETs, MOSFETs Feature Summary

• Ultra-low on-resistance achieved through advanced processing techniques for high efficiency.
• Micro8 package provides the smallest available footprint in an SOIC outline.
• Low profile design suitable for extremely thin application environments.
• Fast switching speed combined with ruggedized device design.

Single FETs, MOSFETs Applications

• Portable electronics
• PCMCIA cards
• Applications where printed circuit board space is at a premium

Single FETs, MOSFETs Procurement Notes

Verify the component manufacturer, as the datasheet originates from International Rectifier, now part of Infineon Technologies. Confirm the specific ordering suffix matches the required tape and reel packaging format. Ensure the date code meets any thermal or current handling rating requirements specified for improved performance metrics.

Single FETs, MOSFETs Selection Notes

Select this component when minimizing PCB area is critical due to its compact Micro8 footprint. Consider the -20V breakdown voltage and -3.6A current capability for low-voltage logic-level switching applications. Evaluate the 90 mΩ on-resistance for efficiency requirements in portable devices where power dissipation must remain low.

Single FETs, MOSFETs Part Context

This component belongs to the Fifth Generation HEXFET family, characterized by advanced processing techniques that reduce silicon area per unit of resistance. The Micro8 package variant specifically addresses space constraints in surface-mount designs, offering a significant reduction in board area compared to traditional SOIC-8 packages while maintaining similar electrical characteristics.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference data for verified substitutes. Generic replacements may not match the specific Micro8 package dimensions or the exact on-resistance values provided by the original HEXFET generation technology.