IRF9Z14SPBF

$1.56

Description：MOSFET P-CH 60V 6.7A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:e486816e4e3a Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRF9Z14SPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 60V 6.7A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF9Z14SPBF

Description：MOSFET P-CH 60V 6.7A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：270 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.7W (Ta), 43W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRF9Z14SPBF

IRF9Z14SPBF

Single FETs, MOSFETs Overview

The IRF9Z14SPBF is a third-generation P-channel power MOSFET manufactured by Vishay Siliconix. It features an absolute maximum drain-source voltage of -60 V and a continuous drain current of -6.7 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 0.5 Ω at a gate-source voltage of -10 V. It operates within a junction temperature range of -55 °C to +175 °C and includes a fully avalanche-rated design with a single pulse avalanche energy capability of 140 mJ.

Single FETs, MOSFETs Feature Summary

Advanced processing technology for low on-resistance per silicon area
Fast switching characteristics suitable for high-frequency applications
Fully avalanche rated for ruggedized device design reliability

Single FETs, MOSFETs Applications

High current surface-mount power applications
Low-profile through-hole mounting requirements
General-purpose power switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm lead-free status and package type. Ensure compatibility with RoHS compliance requirements if applicable to your manufacturing process. Cross-reference the datasheet revision date to validate that all electrical parameters match your design specifications before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a P-channel configuration is required for surface-mount or low-profile through-hole implementations. Evaluate the thermal resistance ratings and safe operating area curves to ensure adequate heat dissipation under expected load conditions. Confirm that the gate drive voltage levels align with the specified threshold and on-state resistance test conditions.

Single FETs, MOSFETs Part Context

This part belongs to the IRF9Z14 family, which encompasses both surface-mount (D2PAK) and low-profile through-hole (I2PAK) variants. The series utilizes advanced processing techniques to achieve efficient performance in power MOSFET applications. It serves as a specialized option within Vishay Siliconix's portfolio for designers needing robust P-channel solutions.