Single FETs, MOSFETs IRFB3004GPBF product image

IRFB3004GPBF

  • Description:MOSFET N-CH 40V 195A TO220AB
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:8c4ec64499c9 Category: Brand:

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IRFB3004GPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 195A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFB3004GPBF

  • Description:MOSFET N-CH 40V 195A TO220AB
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.75mOhm @ 195A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:240 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:9200 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):380W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for IRFB3004GPBF

IRFB3004GPBF

Single FETs, MOSFETs Overview

The IRFB3004GPBF is a single N-channel enhancement-mode power MOSFET from the Infineon HEXFET series. It features a maximum drain-source voltage of 40 V and a continuous drain current of 340 A at 25°C, with a package-limited rating of 195 A. The device exhibits a maximum on-resistance of 1.75 mΩ at 10 V gate drive and a typical gate charge of 160 nC. It operates within a junction temperature range of -55 °C to +175 °C and utilizes a TO-220AB through-hole package.

Single FETs, MOSFETs Feature Summary

  • Enhanced ruggedness in gate, avalanche, and dynamic dv/dt performance
  • Fully characterized capacitance and safe operating area data
  • Improved body diode dv/dt and di/dt capability

Single FETs, MOSFETs Applications

  • High efficiency synchronous rectification in switching mode power supplies
  • Uninterruptible power supply systems
  • Hard switched and high frequency circuits

Single FETs, MOSFETs Procurement Notes

Verify that the suffix 'G' indicates lead-free compliance and halogen-free status as per standard Infineon naming conventions for this series. Confirm the specific pinout configuration matches the TO-220AB footprint requirements for the target application design.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses at 40 V due to its milliohm-level resistance. Ensure the thermal management system can handle the specified power dissipation limits. Verify that the gate drive voltage meets the threshold requirements for full enhancement.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs designed for general-purpose power switching. It shares electrical characteristics with variants such as the IRFB3004PBF, differing primarily in packaging or environmental compliance attributes rather than core semiconductor performance metrics.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the IRFB3004PBF and IRFS3004PBF, provided the package form factor (TO-220 vs D2PAK) is compatible with the assembly process.

IRFB3004GPBFIRFB3004GPBF

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