IRFBF30S

Single FETs, MOSFETs Overview

The IRFBF30S is a third-generation N-Channel Power MOSFET from Vishay Siliconix, housed in a D2PAK (TO-263) surface-mount package. It features a drain-source voltage rating of 900 V and a maximum on-resistance of 3.7 Ω at VGS = 10 V. The device supports a continuous drain current of 3.6 A at 25 °C case temperature and handles a pulsed drain current of 14 A. Key dynamic specifications include a total gate charge of 78 nC and a repetitive avalanche energy rating of 250 mJ. Thermal performance includes a junction-to-case resistance of 1.0 °C/W, with an operating junction temperature range spanning -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Third-generation design combining fast switching capabilities with ruggedized device architecture for enhanced reliability.
• Repetitive avalanche rated to withstand unclamped inductive switching events without failure.
• Optimized for ease of paralleling and simple drive requirements due to low gate charge characteristics.
• High peak diode recovery dV/dt rating ensures robust operation during body diode reverse recovery.

Single FETs, MOSFETs Applications

• High-voltage power conversion circuits requiring efficient switching.
• Industrial motor control systems utilizing high-side or low-side configurations.
• DC-DC converter topologies demanding high breakdown voltage and thermal stability.

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm lead-free status and packaging type. The datasheet distinguishes between RoHS-compliant and non-RoHS-compliant terminations. Ensure that the procurement request explicitly references the correct part number variant to avoid discrepancies in material compliance and physical package dimensions.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a 900 V breakdown voltage with moderate current handling capabilities. The 3.7 Ω on-resistance at 10 V gate drive makes it suitable for applications where standard logic-level driving is not available. Consider the thermal resistance ratings and safe operating area curves to ensure adequate heat dissipation for the intended duty cycle and ambient conditions.

Single FETs, MOSFETs Part Context

This device belongs to the Vishay Siliconix third-generation MOSFET family, which emphasizes cost-effectiveness alongside performance. The D2PAK (TO-263) package is widely adopted in commercial and industrial sectors for power dissipation levels up to approximately 50 W. This generation of devices offers improved switching speeds and lower on-resistance compared to previous iterations within the same voltage class.

Single FETs, MOSFETs Replacement Considerations

The SiHFBF30S-GE3 is documented as a lead-free and halogen-free alternative within the same product line. Verify pinout compatibility and electrical parameter equivalence before substitution. Cross-referencing with other 900 V N-Channel MOSFETs requires careful comparison of RDS(on), Qg, and thermal limits to ensure circuit integrity is maintained.