IRFF9122

$1.28

Description：P-CHANNEL POWER MOSFET
Series：-
Mfr：Harris Corporation
Package：Bulk

SKU:78658bc932cf Category: Single FETs, MOSFETs Brand: Harris Corporation

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Product introduction

IRFF9122 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Harris Corporation. Its product description is P-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFF9122

Description：P-CHANNEL POWER MOSFET
Series：-
Mfr：Harris Corporation
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：20W
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-205AF (TO-39)
Package / Case：TO-205AF Metal Can

Single FETs, MOSFETs datasheet and documents for IRFF9122

IRFF9122

Single FETs, MOSFETs Overview

The IRFF9122 is a P-channel power MOSFET manufactured by Harris Corporation. It features a 100 V drain-source voltage rating and supports a continuous drain current of 3.5 A at case temperature. The device is designed for through-hole mounting in a TO-205AF (TO-39) metal can package. Its maximum power dissipation is rated at 20 W under specified thermal conditions.

Single FETs, MOSFETs Feature Summary

P-channel MOSFET technology
Through-hole mounting capability
Metal can package construction

Single FETs, MOSFETs Applications

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin, as Harris Semiconductor assets were acquired by International Rectifier and subsequently Infineon. Confirm that the specific unit is an original Harris Corporation component rather than a later generation equivalent from the successor entity. Ensure the TO-205AF package type matches the design requirements.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a discrete P-channel MOSFET with a 100 V breakdown voltage. The TO-205AF metal can package provides robust mechanical protection suitable for through-hole assembly processes. Consider the 3.5 A current rating and 20 W power dissipation limits when designing thermal management solutions for the target circuit.

Single FETs, MOSFETs Part Context

Harris Corporation was a prominent American defense contractor and technology provider before its semiconductor division was acquired. The IRFF9122 belongs to the legacy Harris Semiconductor product line. This part represents older discrete power components produced prior to the corporate restructuring and asset transfers involving International Rectifier and Infineon Technologies.