IRFH8325TRPBF

$0.42

Description：MOSFET N-CH 30V 21A/82A PQFN
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:405bbccf22c6 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFH8325TRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 21A/82A PQFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFH8325TRPBF

Description：MOSFET N-CH 30V 21A/82A PQFN
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：21A (Ta), 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs：32 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2487 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：3.6W (Ta), 54W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PQFN (5x6)
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for IRFH8325TRPBF

IRFH8325TRPBF

Single FETs, MOSFETs Overview

The IRFH8325TRPBF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a PQFN 5x6 mm surface-mount package with a maximum drain-source voltage of 30 V and a continuous drain current of 82 A at 25°C ambient temperature. The device exhibits a maximum on-resistance of 7.2 mΩ at VGS = 4.5 V and 5.0 mΩ at VGS = 10 V, with a typical total gate charge of 15 nC. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low thermal resistance to the PCB for efficient heat dissipation
Low profile design enabling increased power density
Industry-standard pinout ensuring multi-vendor compatibility
Compatible with existing surface mount manufacturing techniques

Single FETs, MOSFETs Applications

Synchronous MOSFETs for high frequency buck converters

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm datasheet revision status prior to integration. Ensure storage conditions comply with MSL1 moisture sensitivity requirements. Validate thermal management designs against specified RθJC parameters. Review end-of-life notices for long-term supply continuity.

Single FETs, MOSFETs Selection Notes

Evaluate thermal performance based on specific PCB copper pad dimensions and FR-4 material properties. Consider source bonding technology limitations when calculating maximum continuous current ratings. Verify gate drive voltage levels to ensure optimal on-resistance characteristics. Assess switching speed requirements against typical rise and fall time specifications.

Single FETs, MOSFETs Part Context

This component belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes silicon technology and is designed for general-purpose switching applications requiring low on-resistance and fast switching speeds in compact surface-mount packages.