IRFIBC30GPBF

$3.30

Description：MOSFET N-CH 600V 2.5A TO220-3
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:23ede51b250d Category: Single FETs, MOSFETs Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IRFIBC30GPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 600V 2.5A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFIBC30GPBF

Description：MOSFET N-CH 600V 2.5A TO220-3
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：31 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：660 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：35W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3 Full Pack, Isolated Tab

Single FETs, MOSFETs datasheet and documents for IRFIBC30GPBF

IRFIBC30GPBF

Single FETs, MOSFETs Overview

The IRFIBC30GPBF is a Vishay Siliconix third-generation N-Channel Power MOSFET housed in an isolated TO-220 FULLPAK package. It features a drain-source voltage (VDS) of 600 V and a maximum on-resistance (RDS(on)) of 2.2 Ω at VGS = 10 V. The device supports a continuous drain current of 2.5 A at 25 °C case temperature, with a total gate charge (Qg) of 31 nC. It provides high voltage isolation of 2.5 kV RMS and operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Isolated package design eliminates the need for additional insulating hardware during mounting.
High voltage isolation capability rated at 2.5 kV RMS for commercial-industrial applications.
Third-generation technology combines fast switching speeds with ruggedized device design.

Single FETs, MOSFETs Applications

Commercial and industrial power supply circuits
High-voltage switching applications requiring electrical isolation
Motor control systems utilizing insulated mounting

Single FETs, MOSFETs Procurement Notes

Verify that the specific ordering suffix matches the required lead-free configuration. Confirm the package type corresponds to the TO-220 FULLPAK variant. Ensure the component meets the necessary isolation standards for the intended application environment before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage isolation is required without separate insulators. Evaluate thermal management requirements based on the 35 W maximum power dissipation rating. Consider the 2.2 Ω on-resistance for conduction loss calculations in low-current switching scenarios.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix IRFIBC series of isolated power MOSFETs. The series utilizes the TO-220 FULLPAK molding compound to provide inherent electrical isolation between the drain tab and the external heatsink, simplifying assembly compared to standard TO-220 packages.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

Single FETs, MOSFETs FAQ

What is the purpose of the TO-220 FULLPAK package?

The TO-220 FULLPAK package provides high voltage isolation equivalent to a mica barrier, eliminating the need for additional insulating hardware when mounting to a heatsink.