IRFL9110TRPBF-BE3

$0.85

Description：MOSFET P-CH 100V 1.1A SOT223
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1a941f1df9a3 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFL9110TRPBF-BE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 100V 1.1A SOT223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFL9110TRPBF-BE3

Description：MOSFET P-CH 100V 1.1A SOT223
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：1.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.2Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：200 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 3.1W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for IRFL9110TRPBF-BE3

IRFL9110TRPBF-BE3

Single FETs, MOSFETs Overview

The IRFL9110TRPBF-BE3 is a P-channel power MOSFET manufactured by Vishay Siliconix, housed in a SOT-223 surface-mount package. It features a drain-source voltage rating of -100 V and a continuous drain current of -1.1 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 1.2 Ω at VGS = -10 V and a total gate charge of 8.7 nC. It supports an operating junction temperature range from -55 °C to +150 °C with a maximum power dissipation of 3.1 W at 25 °C.

Single FETs, MOSFETs Feature Summary

Repetitive avalanche rated for ruggedized operation
Includes dynamic dv/dt rating for fast switching applications
Designed for ease of paralleling in multi-device configurations

Single FETs, MOSFETs Applications

Surface-mount power switching circuits
Automated pick-and-place assembly lines
Applications requiring heatsinking via enlarged tab design

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix BE3 during procurement, as it indicates manufacturing at an alternate location compared to standard variants. Confirm that the component meets RoHS and halogen-free requirements through official Vishay documentation. Ensure compatibility with vapor phase, infrared, or wave soldering techniques specified for the SOT-223 package.

Single FETs, MOSFETs Selection Notes

Select this component when a P-channel MOSFET with a -100 V breakdown voltage is required in a compact SOT-223 footprint. Consider its repetitive avalanche capability and dynamic dv/dt rating for robust performance in inductive load environments. Evaluate thermal management needs based on the 40 °C/W junction-to-case thermal resistance rating.

Single FETs, MOSFETs Part Context

This part belongs to the third-generation power MOSFET family from Vishay Siliconix, designed to balance fast switching speeds with low on-resistance. The IRFL9110 variant specifically utilizes the SOT-223 package, which provides improved thermal performance over standard SOIC packages due to an enlarged drain tab for effective heatsinking.