Single FETs, MOSFETs IRFP251 product image

IRFP251

$1.62
  • Description:N-CHANNEL POWER MOSFET
  • Series:-
  • Mfr:Harris Corporation
  • Package:Bulk

SKU:42e066eae716 Category: Brand:

  
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IRFP251 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Harris Corporation. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFP251

  • Description:N-CHANNEL POWER MOSFET
  • Series:-
  • Mfr:Harris Corporation
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):150 V
  • Current - Continuous Drain (Id) @ 25°C:33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:85mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):180W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for IRFP251

IRFP251

Single FETs, MOSFETs Overview

The IRFP251 is a single-element, N-channel silicon metal-oxide semiconductor field-effect transistor (MOSFET) manufactured by Harris Corporation. It features a drain-to-source voltage rating of 100 V and a continuous drain current capacity of 33 A. The device exhibits a maximum on-resistance of 0.085 ohms. It is housed in a TO-247 package with a flange mount configuration, where the case is connected to the drain terminal. The component operates in enhancement mode and supports a maximum junction temperature of 150 °C.

Single FETs, MOSFETs Feature Summary

  • N-channel MOSFET technology for power switching applications
  • Flange mount package design with drain-connected case
  • Logic-level compatible operation within specified parameters

Single FETs, MOSFETs Applications

  • Switching power supplies
  • Power switching circuits
  • General purpose high-current applications

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin carefully, as Harris Semiconductor assets were acquired by International Rectifier and subsequently Infineon. Confirm whether the specific unit is an original Harris production or a legacy stock item. Check RoHS compliance status, as older Harris parts are typically non-compliant. Ensure the TO-247 package dimensions match your thermal management requirements.

Single FETs, MOSFETs Selection Notes

Select this component when a robust N-channel MOSFET with 100 V breakdown and 33 A current handling is required. The low on-resistance of 0.085 ohms aids in efficiency. Consider the TO-247 package for its superior heat dissipation capabilities compared to smaller packages. Verify gate drive compatibility for reliable switching performance in your specific circuit topology.

Single FETs, MOSFETs Part Context

The IRFP251 belongs to the family of power MOSFETs produced by Harris Corporation before its semiconductor division was acquired. It serves as a standard industry component for medium-voltage power applications. The part is often cross-referenced with similar devices from other manufacturers like International Rectifier, which inherited Harris's product lines.

Single FETs, MOSFETs Replacement Considerations

The IRFP264 is a documented substitute part number with comparable specifications. Other equivalents may exist from manufacturers who acquired Harris assets, such as Infineon. Always verify pinout compatibility and thermal characteristics before substitution.

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