IRFR120

Single FETs, MOSFETs Overview

The IRFR120 is a power N-channel MOSFET manufactured by Fairchild Semiconductor. It features a drain-source voltage rating of 100V and a continuous drain current capacity of 7.7A at case temperature. The device exhibits a maximum on-resistance of 0.27 ohms. It utilizes the TO-252AA (DPAK) surface-mount package with three terminals. The component is designed for high-speed switching applications within power electronics systems.

Single FETs, MOSFETs Feature Summary

• N-channel silicon metal-oxide semiconductor field-effect transistor construction
• Surface-mount DPAK package configuration with exposed drain pad
• Capable of handling avalanche energy ratings for robust operation

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Motor control drives
• Power switching modules

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation carefully, as the IRFR120 part number is primarily associated with International Rectifier and Infineon Technologies. Confirm that the specific batch or datasheet explicitly cites Fairchild Semiconductor as the producer to ensure authenticity and accurate technical specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a 100V rated N-channel MOSFET in a DPAK package is required. Ensure the application current does not exceed the 7.7A limit and verify thermal management capabilities for the specified on-resistance. Check for compatibility with standard gate drive voltages typical for HEXFET devices.

Single FETs, MOSFETs Part Context

This component belongs to the broader family of power MOSFETs used in industrial and consumer electronics. While the IRFR series is widely recognized from International Rectifier, sourcing data attributed to Fairchild requires strict verification against official documentation to distinguish between original manufacturing and potential rebranding or legacy inventory.