IRFR6215TRLPBF

$1.39

Description：MOSFET P-CH 150V 13A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:70e3708aca24 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFR6215TRLPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 150V 13A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFR6215TRLPBF

Description：MOSFET P-CH 150V 13A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：295mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：66 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：860 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：110W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFR6215TRLPBF

IRFR6215TRLPBF

Single FETs, MOSFETs Overview

The IRFR6215TRLPbF is a P-Channel HEXFET Power MOSFET manufactured by Infineon Technologies. It features a D-Pak (TO-252AA) surface-mount package and operates with a drain-source breakdown voltage of -150 V. The device supports a continuous drain current of -13 A at 25°C case temperature and handles a pulsed drain current of -44 A. Its maximum power dissipation is rated at 110 W, with an operating junction temperature range from -55°C to +175°C. Key electrical parameters include a static drain-to-source on-resistance of 0.295 Ω at VGS = -10 V and ID = -6.6 A, and a total gate charge of 66 nC.

Single FETs, MOSFETs Feature Summary

Utilizes advanced processing techniques for low on-resistance per silicon area
Fast switching speed combined with ruggedized device design
Fully avalanche rated for inductive load handling
Lead-free construction compliant with consumer-level standards

Single FETs, MOSFETs Applications

Power switching applications requiring high efficiency
DC-DC converter circuits
Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TRLPbF confirms tape-and-reel packaging containing 3000 units per reel. Confirm lead-free status and industrial qualification level against project requirements. Ensure compatibility with vapor phase, infrared, or wave soldering techniques specified for the D-Pak package. Check for any obsolete status updates directly from Infineon.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits that require a P-Channel MOSFET with a -150 V rating and robust avalanche energy capability. Consider the thermal resistance characteristics and the need for adequate PCB mounting to achieve the specified power dissipation limits. Evaluate the gate charge requirements against the driving circuit capabilities.

Single FETs, MOSFETs Part Context

This part belongs to the Fifth Generation HEXFET series from International Rectifier, now part of Infineon Technologies. The series is characterized by advanced process technology aimed at minimizing on-resistance while maintaining fast switching speeds. The IRFR6215 variant specifically targets surface-mount applications using the D-Pak form factor.