IRFR7540PBF

Single FETs, MOSFETs Overview

The IRFR7540PbF is a StrongIRFET HEXFET N-channel power MOSFET in a D-Pak (TO-252AA) package. It features a maximum drain-source voltage of 60V and a typical on-resistance of 4.0mΩ, with a maximum rating of 4.8mΩ at VGS=10V. The device supports a silicon-limited continuous drain current of 110A and a package-limited current of 90A. Key dynamic parameters include a total gate charge of 86nC and a gate-drain charge of 27nC. Thermal resistance from junction to case is 1.05°C/W, supporting operation up to a maximum junction temperature of 175°C.

Single FETs, MOSFETs Feature Summary

• Enhanced ruggedness for gate, avalanche, and dynamic dV/dt conditions
• Fully characterized capacitance and avalanche safe operating area
• Improved body diode dV/dt and dI/dt capability

Single FETs, MOSFETs Applications

• Brushed motor drive applications
• BLDC motor drive applications
• Half-bridge and full-bridge topologies
• Synchronous rectifier applications
• DC/DC and AC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the correct packaging format. The base part number corresponds to tube packaging, while tape and reel options require distinct suffixes such as TRPbF or TRLPbF. Ensure that the selected variant matches the required quantity per reel or tube for the intended manufacturing process.

Single FETs, MOSFETs Selection Notes

Select this component when high thermal stability is required due to its 175°C maximum junction temperature rating. The low on-resistance minimizes conduction losses in high-current scenarios. Consider the package-limited current of 90A for standard mounting arrangements, noting that higher ratings depend on specific lead heating characteristics and bonding technology limits.

Single FETs, MOSFETs Part Context

This device belongs to the StrongIRFET family, utilizing HEXFET technology to deliver enhanced performance over standard MOSFETs. It is available in both D-Pak and I-Pak packages, offering flexibility for surface mount and through-hole designs. The product line emphasizes robustness in demanding switching environments.

Single FETs, MOSFETs Replacement Considerations

The IRFU7540PbF serves as a direct pin-compatible alternative in the I-Pak (TO-251AA) package form factor. Both devices share identical electrical specifications and are designed for equivalent applications within the same voltage and current ranges.

Single FETs, MOSFETs FAQ

What is the difference between the silicon-limited and package-limited drain current?

The silicon-limited current of 110A represents the theoretical maximum based on junction temperature constraints. The package-limited current of 90A accounts for the physical limitations of the source bonding technology and potential lead heating during operation.

How does the device handle unclamped inductive switching?

The IRFR7540PbF is fully characterized for avalanche energy, supporting single-pulse energies up to 273mJ under specific test conditions. It allows for safe operation in avalanche mode provided the maximum junction temperature is not exceeded.