IRFU220S2497

FET, MOSFET Arrays Overview

The IRFU220S2497 is an N-channel power MOSFET manufactured by Harris Corporation. It features a 200V drain-source voltage (Vdss) and supports a continuous drain current of 4.6A at 25°C. The device has a maximum on-resistance (Rds(on)) of 0.8 ohms at Vgs=10V and Id=4.6A. Key electrical parameters include a gate charge (Qg) of 59nC @ 10V, input capacitance (Ciss) of 1300pF @ 25V, and a threshold voltage (Vgs(th)) max of 4V at 250µA. It operates within a junction temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

• N-channel enhancement mode MOSFET technology for efficient switching applications
• Robust thermal performance with specified power dissipation capabilities
• High voltage blocking capability suitable for medium-power circuits

FET, MOSFET Arrays Applications

• Motor control systems requiring N-channel switching
• Power supply output stages
• DC-DC converter topologies

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer designation as Harris Corporation, noting that this entity was acquired by Intersil and subsequently Renesas. Confirm the specific suffix '2497' matches the required datasheet revision. Ensure the component meets the intended voltage and current ratings for the target application circuit design.

FET, MOSFET Arrays Selection Notes

Select this component when a 200V N-channel MOSFET with approximately 0.8 ohm Rds(on) is required. Consider the TO-220AB or similar package constraints if through-hole mounting is necessary. Evaluate thermal management requirements based on the 4.6A continuous current rating and junction temperature limits.

FET, MOSFET Arrays Part Context

This part belongs to the family of discrete power MOSFETs designed for general-purpose switching. It complements other Harris/Intersil power devices offering similar voltage classes. The numbering scheme indicates specific binning or testing criteria defined by the original manufacturer's internal standards.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes may include IRF244 or equivalent N-channel MOSFETs from other manufacturers with matching 200V/4.6A specifications. Verify pinout compatibility and thermal resistance values before substitution.