Single FETs, MOSFETs IRFU430APBF product image

IRFU430APBF

$1.87
  • Description:MOSFET N-CH 500V 5A TO251AA
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube

SKU:9461b25b4f92 Category: Brand:

  
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IRFU430APBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 500V 5A TO251AA. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFU430APBF

  • Description:MOSFET N-CH 500V 5A TO251AA
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.7Ohm @ 3A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:490 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):110W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-251AA
  • Package / Case:TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for IRFU430APBF

IRFU430APBF

Single FETs, MOSFETs Overview

The IRFU430APBF is a Vishay Siliconix N-Channel Power MOSFET featuring a 500 V drain-source voltage rating and a maximum on-state resistance of 1.7 Ω at 10 V gate drive. It supports a continuous drain current of 5.0 A at 25 °C case temperature, with a total gate charge of 24 nC. The device operates within a junction temperature range of -55 °C to +150 °C and utilizes the IPAK (TO-251) surface-mount package.

Single FETs, MOSFETs Feature Summary

  • Low gate charge for simple drive requirements
  • Improved gate, avalanche, and dynamic dV/dt ruggedness
  • Fully characterized capacitance and avalanche voltage and current
  • Effective Coss specified

Single FETs, MOSFETs Applications

  • Switch mode power supply (SMPS)
  • Uninterruptible power supply
  • High speed power switching

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance with lead-free and halogen-free material categorization standards. Ensure that the selected component matches the required thermal and electrical specifications for the intended application environment before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component based on its 500 V breakdown voltage and 1.7 Ω on-resistance characteristics suitable for high-voltage switching applications. Consider the IPAK (TO-251) package dimensions for PCB layout compatibility and evaluate the thermal derating curves to ensure adequate heat dissipation under continuous load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the IRFR430A, IRFU430A, SiHFR430A, and SiHFU430A family of Power MOSFETs manufactured by Vishay Siliconix. These devices share identical electrical performance characteristics but differ in their physical packaging configurations, such as DPAK, IPAK, or tape-and-reel options.

Single FETs, MOSFETs Replacement Considerations

IRFR430APbF, SiHFR430A-GE3, SiHFU430A-GE3

Single FETs, MOSFETs FAQ

What is the peak diode recovery dV/dt rating?

The peak diode recovery dV/dt rating is 3.0 V/ns.

Is the device capable of handling repetitive avalanche energy?

Yes, the device supports a repetitive avalanche energy (EAR) of 11 mJ and a repetitive avalanche current (IAR) of 5.0 A.

IRFU430APBFIRFU430APBF
$1.87
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