Single FETs, MOSFETs IRFU9214PBF product image

IRFU9214PBF

$1.59
  • Description:MOSFET P-CH 250V 2.7A TO251AA
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube

SKU:9a5257cad310 Category: Brand:

  
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IRFU9214PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 250V 2.7A TO251AA. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFU9214PBF

  • Description:MOSFET P-CH 250V 2.7A TO251AA
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):250 V
  • Current - Continuous Drain (Id) @ 25°C:2.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:3Ohm @ 1.7A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:220 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):50W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-251AA
  • Package / Case:TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for IRFU9214PBF

IRFU9214PBF

Single FETs, MOSFETs Overview

The IRFU9214PBF is a P-channel power MOSFET manufactured by Vishay Siliconix. It features a straight lead IPAK (TO-251AA) package designed for through-hole mounting applications. The device utilizes advanced third-generation processing techniques to achieve low on-resistance per silicon area. Key electrical specifications include a drain-source voltage of -250 V, a continuous drain current of -2.7 A at 25 °C case temperature, and a maximum drain-source on-state resistance of 3.0 Ω at a gate-source voltage of -10 V. The component is fully avalanche rated with a single pulse avalanche energy capability of 100 mJ.

Single FETs, MOSFETs Feature Summary

  • Straight lead configuration suitable for through-hole mounting
  • Fully avalanche rated ruggedized device design
  • Fast switching performance characteristics
  • Third-generation advanced process technology

Single FETs, MOSFETs Applications

  • Power switching circuits requiring high voltage isolation
  • Through-hole PCB assembly designs
  • Inductive load control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm the package type and compliance status. The 'PBF' suffix indicates a lead-free and halogen-free product compliant with RoHS directives. Ensure the procurement request specifies the straight lead IPAK variant rather than the surface-mount DPAK version to match the intended mounting method.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage P-channel MOSFET is required for through-hole implementations. The -250 V rating supports demanding power applications. Designers must account for the 3.0 Ω on-resistance value which impacts conduction losses. Verify that the thermal management strategy accommodates the specified linear derating factor and junction temperature limits.

Single FETs, MOSFETs Part Context

This part belongs to the IRFR9214/IRFU9214 family from Vishay Siliconix. The family includes both surface-mount DPAK variants and through-hole IPAK versions. All variants share identical electrical characteristics but differ in physical package geometry and mounting style. The IPAK version provides a robust mechanical connection for traditional board layouts.

Single FETs, MOSFETs Replacement Considerations

  • SiHFU9214-GE3
  • IRFU9214TRLPBF

Single FETs, MOSFETs FAQ

Is the IRFU9214PBF suitable for surface mount assembly?

No, the IRFU9214PBF features straight leads designed specifically for through-hole mounting. Surface mount applications require the DPAK packaged IRFR9214PBF variant.

What is the maximum single pulse avalanche energy rating?

The device is fully avalanche rated with a maximum single pulse avalanche energy of 100 mJ when starting at a junction temperature of 25 °C.

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