IRFU9220PBF

$2.57

Description：MOSFET P-CH 200V 3.6A TO251AA
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:7137a47e162b Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFU9220PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 200V 3.6A TO251AA. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFU9220PBF

Description：MOSFET P-CH 200V 3.6A TO251AA
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：340 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 42W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-251AA
Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for IRFU9220PBF

IRFU9220PBF

Single FETs, MOSFETs Overview

The IRFU9220PBF is a P-channel power MOSFET manufactured by Vishay Siliconix, utilizing advanced Third Power MOSFETs technology. It features a straight lead IPAK (TO-251) package designed for through-hole mounting applications. The device provides a drain-source voltage of -200 V and a continuous drain current of -3.6 A at 25 °C case temperature. Key electrical parameters include a maximum on-state resistance of 1.5 Ω at VGS = -10 V and a total gate charge of 20 nC. It supports an operating junction temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Straight lead configuration suitable for through-hole mounting
Repetitive avalanche rated for rugged operation
Dynamic dV/dt rating capability
Fast switching performance

Single FETs, MOSFETs Applications

Through-hole surface mount circuit designs
Power switching applications requiring high voltage isolation
Inductive load control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure compliance with material categorization and halogen-free requirements. Confirm that the requested component matches the straight lead IPAK (TO-251) package variant intended for through-hole assembly rather than the surface-mount DPAK version.

Single FETs, MOSFETs Selection Notes

Select this component when through-hole mounting is required for a P-channel MOSFET with a 200 V breakdown voltage. Ensure the application design accounts for the linear derating factor of 0.33 W/°C above 25 °C case temperature. Verify that the gate drive voltage aligns with the specified threshold and on-state resistance conditions for optimal performance.

Single FETs, MOSFETs Part Context

This part belongs to the IRFR9220, IRFU9220, SiHFR9220, and SiHFU9220 family of power MOSFETs. The IRFU9220 specifically denotes the straight lead version intended for through-hole mounting, distinguishing it from the surface-mount DPAK variants within the same electrical specification group.

Single FETs, MOSFETs Replacement Considerations

IRFR9220PbF

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy for this device?

The maximum single pulse avalanche energy is 310 mJ.

Is the IRFU9220PBF available in a tape and reel packaging option?

No, the IRFU9220PBF uses a tube package for its straight lead IPAK form factor. Tape and reel options are available for the surface-mount DPAK versions.

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