IRL2910STRL

Single FETs, MOSFETs Overview

The IRL2910STRL is a surface-mount N-channel power MOSFET in the D2PAK (TO-262) package. It features a drain-source breakdown voltage of 100V and a continuous drain current of 55A at 25°C case temperature. The device exhibits an ultra-low on-resistance of 26mΩ at VGS=10V. Key electrical parameters include a gate threshold voltage range of 1.0V to 2.0V, total gate charge of 140nC, and a single pulse avalanche energy rating of 520mJ. Operating junction temperatures range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Logic-level gate drive capability for direct interface with standard logic circuits
• Advanced process technology enabling extremely low on-resistance per silicon area
• Fully rated for unclamped inductive switching and avalanche energy events
• Fast switching characteristics combined with ruggedized device design

Single FETs, MOSFETs Applications

• High-efficiency synchronous rectification in DC-DC converters
• Power management circuits requiring low profile surface mount packages
• Load switching applications utilizing logic-level gate drive compatibility

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'STR' corresponds to tape-and-reel packaging when sourcing this component. Confirm that the manufacturer designation aligns with Infineon Technologies or authorized successors following industry acquisitions. Ensure compliance with RoHS directives and lead-free assembly requirements specified in the datasheet before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs prioritizing low conduction losses and high current handling within a surface-mount form factor. Evaluate thermal performance against the 0.75°C/W junction-to-case resistance and ensure adequate PCB copper area for heat dissipation. Verify that the 100V breakdown voltage provides sufficient margin for the target application's supply rails.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET Power MOSFET family, specifically the fifth generation utilizing advanced processing techniques. The IRL2910 series includes through-hole variants like the IRL2910L; the 'S' suffix denotes the D2PAK surface-mount package. The 'IRL' prefix indicates logic-level gate drive functionality suitable for lower voltage control signals.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other IRL2910 variants such as IRL2910SPBF for pin-compatible alternatives. Verify that any substitute maintains identical RDS(on), V(BR)DSS, and package dimensions to ensure mechanical and electrical interchangeability without circuit redesign.