IRL5602STRR

Single FETs, MOSFETs Overview

The IRL5602STRR is a P-Channel Power MOSFET from the Fifth Generation HEXFET family, manufactured by Infineon Technologies. It features a D2PAK (TO-263AB) surface-mount package with three terminals. Key electrical parameters include a drain-to-source breakdown voltage of -20V and a maximum continuous drain current of -24A at 25°C case temperature. The device exhibits a typical static drain-to-source on-resistance of 0.042Ω at VGS = -4.5V and ID = -12A. Thermal characteristics specify a junction-to-case resistance of 2.0°C/W and a junction-to-ambient resistance of 40°C/W when mounted on an FR-4 board. The component supports an operating junction temperature range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Advanced processing technology enables extremely low on-resistance per silicon area for high efficiency.
• Fast switching speed combined with ruggedized device design ensures reliable operation.
• Fully avalanche rated capability provides robustness against inductive load transients.
• D2Pak package offers high power capability and low internal connection resistance.

Single FETs, MOSFETs Applications

• High frequency synchronous buck converters
• Computer processor power supply circuits
• General purpose power switching applications

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin as Infineon Technologies or International Rectifier, noting that IR was acquired by Infineon. Confirm the specific ordering suffix STRR corresponds to the tape and reel packaging format rather than tube packaging. Ensure the part number matches the exact P-channel specification and verify compliance with relevant RoHS directives if required for the target application environment.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring logic-level gate drive compatibility with a threshold voltage of approximately -0.7V to -1.0V. The low on-resistance makes it suitable for high-current DC-DC conversion where conduction losses must be minimized. Consider the thermal resistance values when designing heat dissipation strategies for dense PCB layouts. The fully avalanche-rated nature allows its use in inductive loads without external protection diodes under specific conditions.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET Power MOSFET series, representing the fifth generation of technology from International Rectifier. The series is characterized by advanced processing techniques aimed at reducing on-resistance while maintaining fast switching speeds. The D2Pak package is designed to accommodate large die sizes, providing superior power handling capabilities compared to smaller surface-mount packages.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the same HEXFET family or other P-channel MOSFETs with compatible -20V VDS and similar RDS(on) specifications. Verify pinout compatibility for Gate, Drain, and Source assignments in the D2PAK package. Ensure replacement parts meet the same thermal and avalanche energy ratings for equivalent performance.

Single FETs, MOSFETs FAQ

What is the gate threshold voltage range for the IRL5602STRR?

The gate threshold voltage ranges from a minimum of -0.7V to a maximum of -1.0V, measured at VDS = VGS and ID = -250µA.

Is the IRL5602STRR capable of handling avalanche events?

Yes, the device is fully avalanche rated with a single pulse avalanche energy rating of 290 mJ and a repetitive avalanche energy rating of 7.5 mJ.

What is the maximum pulsed drain current for this component?

The maximum pulsed drain current (IDM) is specified as -96 A.