IRL630STRR

Single FETs, MOSFETs Overview

The IRL630STRR is a silicon N-channel Power MOSFET manufactured by Vishay Siliconix. It operates in enhancement mode with a drain-source breakdown voltage of 200 V and a continuous drain current rating of 9 A. The device features a maximum on-resistance of 0.4 ohms at a gate drive of 10 V. Packaged in the TO-263AB (D2PAK) surface-mount format, it is designed for logic-level compatibility to facilitate direct interface with standard digital control circuits.

Single FETs, MOSFETs Feature Summary

• Logic level compatible for direct drive from standard logic signals
• Enhanced switching performance characteristics
• Lead-free construction compliant with RoHS directives

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Power management systems
• Load switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and manufacturer documentation to confirm electrical parameters and mechanical dimensions. Ensure the component matches the required TO-263AB package style and lead-free specifications before integration into production designs.

Single FETs, MOSFETs Selection Notes

Select this component when a 200 V rated N-channel MOSFET with logic-level input compatibility is required. Consider the 9 A current capacity and 0.4 ohm on-resistance limits against thermal dissipation requirements in the target application environment.

Single FETs, MOSFETs Part Context

This part belongs to the IRL630 family of power field-effect transistors. It shares core electrical characteristics with variants such as the IRL630PBF and IRL630-018PBF, differing primarily in packaging configuration and reel orientation for automated assembly processes.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the IRL630PBF and IRL630-018PBF. Verify that alternative packages meet the physical footprint constraints of the existing design.