IRL640L

$1.07

Description：MOSFET N-CH 200V 17A TO262-3
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:f09222f516bf Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRL640L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 200V 17A TO262-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRL640L

Description：MOSFET N-CH 200V 17A TO262-3
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4V, 5V
Rds On (Max) @ Id, Vgs：180mOhm @ 10A, 5V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：66 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：1800 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-262-3
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for IRL640L

IRL640L

Single FETs, MOSFETs Overview

The Vishay Siliconix IRL640L is a third-generation N-Channel Power MOSFET designed for demanding applications. It features a drain-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 17 A at case temperature. The device utilizes a TO-262-3 through-hole package with a maximum power dissipation of 60 W at case temperature. Key electrical parameters include a gate charge (Qg) of 18 nC at 5 V, an input capacitance (Ciss) of 870 pF at 25 V, and a threshold voltage (Vgs(th)) of 2 V at 250 µA. The maximum gate-source voltage (Vgs) is ±10 V.

Single FETs, MOSFETs Feature Summary

Third-generation Power MOSFET technology providing a combination of fast switching speed and low on-resistance.

Single FETs, MOSFETs Applications

Power switching circuits
DC-DC converters
Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the component status as discontinued or obsolete before procurement planning. Confirm RoHS compliance status, as historical data indicates non-compliance for this specific part number variant. Ensure the TO-262-3 package footprint matches the target PCB design. Validate that the ±10 V maximum gate-source rating aligns with the intended driver circuit capabilities to prevent device damage.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 200 V blocking capability and moderate current handling in a through-hole configuration. Consider the 18 nC gate charge for driving efficiency. Evaluate thermal management requirements given the 60 W case dissipation limit. Compare against newer generations if lower on-resistance or enhanced reliability metrics are required for the specific application environment.

Single FETs, MOSFETs Part Context

The IRL640L belongs to the IRL640 family of N-Channel Power MOSFETs from Vishay Siliconix. This series represents third-generation technology optimized for general-purpose power switching. The 'L' suffix typically denotes specific packaging or lead form variations within the standard IRL640 product line, housed in the TO-262-3 (I2PAK) package.