Single FETs, MOSFETs IRLL110PBF product image

IRLL110PBF

$0.21
  • Description:MOSFET N-CH 100V 1.5A SOT223
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube

SKU:140ae8363cff Category: Brand:

  
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IRLL110PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 100V 1.5A SOT223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRLL110PBF

  • Description:MOSFET N-CH 100V 1.5A SOT223
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:1.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 5V
  • Rds On (Max) @ Id, Vgs:540mOhm @ 900mA, 5V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:6.1 nC @ 5 V
  • Vgs (Max):±10V
  • Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):2W (Ta), 3.1W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-223
  • Package / Case:TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for IRLL110PBF

IRLL110PBF

Single FETs, MOSFETs Overview

The IRLL110PBF is a Vishay Siliconix third-generation N-Channel Power MOSFET housed in a SOT-223 surface-mount package. It features a 100 V drain-source voltage rating and a continuous drain current of 1.5 A at 25 °C case temperature. The device specifies an on-resistance of 0.54 Ω at VGS = 5.0 V and 0.76 Ω at VGS = 4.0 V, with a maximum gate charge of 6.1 nC. It supports logic-level gate drive, repetitive avalanche operation, and fast switching characteristics.

Single FETs, MOSFETs Feature Summary

  • Logic-level gate drive capability specified at low gate voltages
  • Repetitive avalanche rated for ruggedized circuit designs
  • Dynamic dV/dt rating for high-speed switching applications

Single FETs, MOSFETs Applications

  • Surface-mount power switching circuits
  • Logic-level controlled load management
  • High-voltage surface-mount thermal management

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm lead-free status and manufacturing location. Confirm that the requested part number matches the exact electrical specifications required for the target application before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a surface-mount N-Channel MOSFET with a 100 V rating and logic-level compatibility is required. Ensure the design accommodates the specified on-resistance values at the intended operating gate voltage and verify thermal dissipation requirements within the SOT-223 package constraints.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix third-generation power MOSFET family. These devices are engineered to provide a combination of fast switching speeds, low on-resistance, and cost-effectiveness. The SOT-223 package facilitates automated pick-and-place assembly while offering improved thermal performance through an enlarged heatsinking tab.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's official cross-reference data for verified substitute part numbers. Do not assume functional equivalence based solely on package type or general voltage ratings without verifying specific electrical parameters.

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