IRLS4030TRL7PP

Description：MOSFET N-CH 100V 190A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6a2e8808d37d Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRLS4030TRL7PP is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 190A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRLS4030TRL7PP

Description：MOSFET N-CH 100V 190A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：190A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.9mOhm @ 110A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：140 nC @ 4.5 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：11490 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：370W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D2PAK (7-Lead)
Package / Case：TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Single FETs, MOSFETs datasheet and documents for IRLS4030TRL7PP

IRLS4030TRL7PP

Single FETs, MOSFETs Overview

The IRLS4030-7PPbF is a single N-channel HEXFET power MOSFET with a 100V drain-source breakdown voltage and a continuous drain current of 190A at 25°C case temperature. It features a maximum on-resistance of 3.9mΩ at VGS=10V and 4.1mΩ at VGS=4.5V, optimized for logic-level drive. The device operates within a junction temperature range of -55°C to +175°C, dissipating up to 370W. Key dynamic parameters include a total gate charge of 93nC typ., an internal gate resistance of 2.0Ω, and a forward transconductance of 250S.

Single FETs, MOSFETs Feature Summary

Optimized for logic level drive with very low RDS(ON) at 4.5V VGS
Improved gate, avalanche, and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability

Single FETs, MOSFETs Applications

DC Motor Drive
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and reel specifications. Ensure that the component meets the required industrial market qualification standards before integration into designs. Cross-reference the datasheet revision date to validate parameter accuracy. Confirm lead-free status and RoHS compliance requirements with the supplier prior to procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 100V rating and high current handling are required alongside logic-level gate drive compatibility. The low on-resistance minimizes conduction losses in synchronous rectification applications. Evaluate thermal management needs based on the 0.40°C/W junction-to-case thermal resistance. Consider the fully characterized avalanche energy ratings for inductive load switching scenarios requiring robust transient performance.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies (formerly International Rectifier). It utilizes the D2Pak-7 pin surface mount package, providing efficient heat dissipation for high-power applications. The device represents an evolution in silicon technology designed to offer superior electrical performance and ruggedness compared to standard MOSFETs in the same voltage class.