IRS2113MPBF

$1.02

Description：IC GATE DRVR HALF-BRIDGE 16MLPQ
Series：-
Mfr：Infineon Technologies
Package：Tube

SKU:80add18d7ed7 Category: Gate Drivers Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IRS2113MPBF is listed in the Gate Driver range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC GATE DRVR HALF-BRIDGE 16MLPQ. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for IRS2113MPBF

Description：IC GATE DRVR HALF-BRIDGE 16MLPQ
Series：-
Mfr：Infineon Technologies
Package：Tube
Driven Configuration：Half-Bridge
Channel Type：Independent
Number of Drivers：2
Gate Type：IGBT, MOSFET (N-Channel)
Voltage - Supply：10V ~ 20V
Logic Voltage - VIL, VIH：6V, 9.5V
Current - Peak Output (Source, Sink)：2.5A, 2.5A
Input Type：Non-Inverting
Rise / Fall Time (Typ)：25ns, 17ns
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：16-VFQFN Exposed Pad, 14 Leads
Supplier Device Package：16-MLPQ (4x4)
Grade：-
Qualification：-
High Side Voltage - Max (Bootstrap)：600 V

Gate Driver datasheet and documents for IRS2113MPBF

IRS2113MPBF

Gate Driver Overview

The IRS2113MPBF is a high-voltage integrated circuit designed for high-speed power MOSFET and IGBT driving applications. It features independent high-side and low-side outputs with a 600V blocking capability. The device operates within a supply voltage range of 10V to 20V, delivering peak source and sink currents of 2.5A each. Key electrical parameters include a maximum propagation delay of 150ns, rise time of 35ns, and fall time of 25ns. It functions across an extended temperature range from -40°C to +125°C and utilizes junction isolation for level shifting.

Gate Driver Feature Summary

Provides independent high-side and low-side gate drive channels with functional level shifting.
Supports direct interface with standard CMOS or TTL logic inputs.
Includes under-voltage lockout protection for both supply rails to ensure safe operation.
Features a shutdown pin to disable outputs independently of input signals.

Gate Driver Applications

Motor control systems
Power factor correction circuits
DC-DC converters

Gate Driver Procurement Notes

Verify the specific suffix MPBF indicates the MLPQ package variant distinct from the PDIP version. Confirm current lifecycle status as End-of-Life notifications may apply to this component family. Ensure compatibility with existing PCB footprints for the 16-lead MLPQ package during procurement planning.

Gate Driver Selection Notes

Select this component when a monolithic solution for half-bridge topologies is required. It is suitable for designs needing 600V isolation between floating high-side driver and ground-referenced logic. Consider thermal management requirements due to power dissipation characteristics in the MLPQ package.

Gate Driver Part Context

This part belongs to the IR211x series of high-voltage gate drivers manufactured by Infineon Technologies. It serves as a bridge between low-voltage control logic and high-power switching devices. The MLPQ package offers a compact form factor compared to traditional through-hole DIP packages while maintaining similar electrical performance specifications.