IS42S32200C1-55TL-TR

Memory IC Overview

The IS42S32200C1-55TL-TR is a 64-Mbit Synchronous Dynamic Random Access Memory (SDRAM) manufactured by ISSI. It features a 32-bit data bus width and an internal organization of 512K bits x 32 bits across four independent banks. Designed for high-speed operation, the device supports clock frequencies up to 183 MHz with a CAS latency of 3. Key timing parameters include a cycle time of 5.5 ns and an access time of 5 ns from the clock rising edge. The component operates on a single 3.3V power supply and utilizes LVTTL-compatible logic levels.

Memory IC Feature Summary

• Quad-bank architecture enables concurrent operations and row precharge hiding for improved throughput.
• Synchronous pipeline interface registers all inputs and outputs relative to the positive clock edge.
• Supports programmable burst lengths including sequential and interleave sequences.
• Includes self-refresh and power-down modes for efficient energy management.

Memory IC Applications

• High-performance embedded memory systems
• Industrial control applications requiring wide temperature ranges
• Consumer electronics utilizing synchronous DRAM interfaces
• Network equipment and communication devices

Memory IC Procurement Notes

Verify that the specific ordering suffix corresponds to the required package type and temperature grade. Confirm lead times and availability as manufacturing status may vary. Ensure compliance with RoHS directives and check for any specific environmental certifications required for the target deployment environment before finalizing orders.

Memory IC Selection Notes

Select this component when a 64-Mbit density with a 32-bit interface is required. Consider the -55 speed grade for designs needing 5.5 ns cycle times at 183 MHz. Evaluate the TSOP II versus BGA package options based on board space constraints and thermal requirements. Verify compatibility with existing system voltage levels and clock speeds.

Memory IC Part Context

This part belongs to the IS42S32200 family of 64-Mbit SDRAMs. Variants within the series differ primarily in speed grades, operating temperature ranges, and physical packaging configurations such as TSOP II or Ball Grid Array formats. The C1 designation typically indicates specific electrical characteristics or revisions within the broader product line.

Memory IC Replacement Considerations

AS4C2M32S-7BCNTR by Alliance Memory, Inc. is a documented substitute offering similar specifications.

Memory IC FAQ

How does the device handle bank interleaving?

The quad-bank architecture allows the controller to hide precharge cycles by accessing one bank while another is being precharged, enabling seamless random-access operations.

What is the function of the A10 pin during a PRECHARGE command?

During a PRECHARGE command, if A10 is HIGH, all banks are precharged. If A10 is LOW, only the bank selected by BA0 and BA1 is precharged.