IS42S32800B-7BL-TR

Memory IC Overview

The IS42S32800B-7BL-TR is a 256-Mbit SDRAM manufactured by ISSI. It features an 8x13mm, 90-ball LF-BGA package with a 0.8mm pitch. The device operates at clock rates of 166 MHz or 143 MHz and supports a single +3.3V ±0.3V power supply. It utilizes an LVTTL interface and includes four internal banks for concurrent operation.

Memory IC Feature Summary

• Supports concurrent auto precharge operations across multiple internal banks
• Features fully synchronous operation with an internal pipelined architecture
• Includes programmable mode register settings for CAS latency, burst length, and burst type
• Provides individual byte control via DQM inputs during read and write cycles

Memory IC Applications

• Applications requiring high memory bandwidth
• Systems utilizing quad 2M x 32 DRAM configurations
• Embedded designs needing self-refresh and power-down modes

Memory IC Procurement Notes

Verify the specific suffix 'TR' indicates tape-and-reel packaging when sourcing. Confirm the operating temperature range matches the industrial grade requirements if applicable. Ensure the 90-ball BGA footprint aligns with the PCB design constraints before finalizing procurement.

Memory IC Selection Notes

Select this component for designs requiring a 32-bit data bus width and support for both sequential and interleaved burst types. Consider the 90-ball BGA package size for space-constrained layouts. Verify that the system voltage matches the specified +3.3V supply requirement.

Memory IC Part Context

This part belongs to the IS42S32800B series of synchronous dynamic random-access memory. It is designed as a high-speed CMOS device with a synchronous interface where all signals are registered on the positive edge of the clock signal.

Memory IC Replacement Considerations

IS42S32800J-6BLI

Memory IC FAQ

What refresh cycle requirements does the IS42S32800B support?

The device requires 4096 refresh cycles within 64ms for standard grades, or 4096 cycles within 32ms for industrial grade.

How is the burst length programmed in this SDRAM?

The burst length is programmed via the Mode Register Set command and can be set to 2, 4, 8, or full page.