ISC058N04NM5ATMA1

Single FETs, MOSFETs Overview

The ISC058N04NM5ATMA1 is an OptiMOS™ 5 N-channel power transistor with a 40 V drain-source breakdown voltage. It features a maximum on-resistance of 5.8 mΩ at VGS=10 V and supports a continuous drain current of 63 A at TC=25 °C. The device utilizes a TDSON-8 FL package with enlarged source interconnection for superior thermal performance. Key dynamic parameters include a total gate charge of 16 nC and an output charge of 13 nC. It is rated for junction temperatures up to 175 °C and has undergone 100% avalanche testing.

Single FETs, MOSFETs Feature Summary

• Optimized low on-resistance for high efficiency
• Enhanced thermal resistance via enlarged source connection
• Validated for industrial applications per JEDEC standards
• Guaranteed 100% avalanche energy capability

Single FETs, MOSFETs Applications

• Battery-powered equipment
• Low-voltage motor drive circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against official Infineon documentation to ensure correct package variant and tape-and-reel specifications. Confirm that the application environment remains within the specified -55 °C to +175 °C operating range. Check for any required automotive or specialized industrial qualification certifications if the deployment involves safety-critical systems, as standard industrial validation may not cover all extreme conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a compact footprint with high current handling is required for 40 V systems. The TDSON-8 FL package offers significant board space savings compared to traditional packages while maintaining robust thermal dissipation. Ensure the gate drive voltage aligns with the 10 V specification to achieve the minimum on-resistance. Consider the 63 A continuous current rating relative to the actual case temperature derating curves provided in the datasheet.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™ 5 family from Infineon Technologies, designed for general-purpose power switching. It represents a generation of silicon MOSFETs optimized for low conduction losses and fast switching speeds. The 'FL' designation indicates a leadless package with enhanced thermal connectivity through the bottom pad, distinguishing it from standard surface-mount variants.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 40 V rating, N-channel configuration, and TDSON-8 FL package dimensions. Verify that alternative components meet or exceed the 5.8 mΩ RDS(on) and 63 A ID requirements. Ensure thermal resistance characteristics are compatible with the existing PCB copper area design.