ISC0602NLSATMA1

$1.72

Description：MOSFET N-CH 80V 14A/66A TDSON-8
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e7039b5a28a4 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

ISC0602NLSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 80V 14A/66A TDSON-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for ISC0602NLSATMA1

Description：MOSFET N-CH 80V 14A/66A TDSON-8
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：14A (Ta), 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.3V @ 29µA
Gate Charge (Qg) (Max) @ Vgs：22 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1800 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 60W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-6
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for ISC0602NLSATMA1

ISC0602NLSATMA1

Single FETs, MOSFETs Overview

The ISC0602NLSATMA1 is an OptiMOS™5 N-channel power MOSFET with a drain-source voltage of 80 V. It features a maximum on-state resistance of 7.3 mΩ at VGS=10V and supports a continuous drain current of 66 A at 25°C case temperature. The device utilizes PG-TDSON-8 packaging, offering superior thermal resistance with a junction-to-case value of 1.2 °C/W. Key electrical parameters include a gate charge of 11 nC at 4.5V and 22 nC at 10V, alongside an output charge of 23 nC.

Single FETs, MOSFETs Feature Summary

Optimized for high-frequency switching applications
Logic level gate drive capability
100% avalanche tested for robustness

Single FETs, MOSFETs Applications

Charger designs
Adapter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging details. Ensure the component matches the PG-TDSON-8 package outline dimensions. Confirm RoHS compliance status through the manufacturer's material content data sheet before integration into production.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage, high-current applications requiring efficient logic-level control. Evaluate thermal performance based on the specified junction-to-case resistance and PCB cooling area requirements. Consider the gate charge characteristics when designing driver circuits for optimal switching speed and efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™5 family of power transistors designed by Infineon Technologies. It represents a generation of N-channel MOSFETs optimized for efficiency and thermal management in compact surface-mount packages. The technology focuses on reducing conduction and switching losses for modern power supply architectures.