ISL9K860P3

Description：DIODE ARRAY AVAL 600V 8A TO220-3
Series：Stealth™

SKU:6cd6b7784efe Category: Diode Arrays Brand: onsemi

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Product introduction

ISL9K860P3 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARRAY AVAL 600V 8A TO220-3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for ISL9K860P3

Description：DIODE ARRAY AVAL 600V 8A TO220-3
Series：Stealth™
Mfr：onsemi
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：Avalanche
Voltage - DC Reverse (Vr) (Max)：600 V
Current - Average Rectified (Io) (per Diode)：8A
Voltage - Forward (Vf) (Max) @ If：2.4 V @ 8 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：30 ns
Current - Reverse Leakage @ Vr：100 µA @ 600 V
Operating Temperature - Junction：-55°C ~ 175°C
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220-3
Grade：-
Qualification：-

Diode Arrays datasheet and documents for ISL9K860P3

ISL9K860P3

Diode Arrays Overview

The ISL9K860P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. It features a peak repetitive reverse voltage of 600V and an average rectified forward current of 8A per leg, with a total device current of 16A. The junction-to-case thermal resistance is 1.75°C/W. Operating temperature ranges from -55 to 175°C. Reverse recovery time is typically 25ns at 1A/µs dIF/dt and 30ns at 8A/µs. Avalanche energy rating is 20mJ.

Diode Arrays Feature Summary

Soft recovery characteristics minimize ringing and reduce snubber requirements
Fast reverse recovery reduces switching losses in transistors
Rated for avalanche energy operation under specific conditions

Diode Arrays Applications

Switch Mode Power Supplies
Hard Switched PFC Boost Diode
UPS Free Wheeling Diode
Motor Drive FWD
Snubber Diode

Diode Arrays Procurement Notes

Verify the datasheet revision matches Rev. C or later when sourcing. Confirm the package marking K860P3 aligns with the TO-220AB form factor. Ensure thermal management design accounts for the specified junction-to-case resistance. Check that operating temperatures remain within the -55 to 175°C range during application.

Diode Arrays Selection Notes

Select this component for high-frequency hard-switched environments requiring soft recovery behavior. Evaluate thermal constraints based on the 1.75°C/W junction-to-case resistance. Consider the 600V blocking capability and 8A continuous current rating per leg. Verify compatibility with IGBT drivers for optimal efficiency in power density designs.

Diode Arrays Part Context

Formerly known as developmental type TA49409, this part belongs to the Stealth™ family designed for low loss performance. Manufactured originally by Fairchild Semiconductor, it serves as a dual diode solution for demanding power electronics. The technology focuses on reducing reverse recovery charge and current spikes.