IV1Q06060T3G

Single FETs, MOSFETs Overview

The IV1Q06060T3G is a Silicon Carbide (SiC) MOSFET with a 650V drain-source voltage rating and a typical on-resistance of 60mΩ at 25°C. It supports a continuous drain current of 50A at 25°C case temperature, reducing to 37A at 100°C. The device features a TO-247-3 package with a junction-to-case thermal resistance of 0.659°C/W. Key electrical parameters include a gate threshold voltage of 2.8V typ., total gate charge of 69.5nC, and switching energies of 129.7μJ (turn-on) and 17.4μJ (turn-off). The intrinsic body diode exhibits a forward voltage of 3.8V and a reverse recovery time of 44.7ns.

Single FETs, MOSFETs Feature Summary

• High blocking voltage combined with low on-resistance for efficient power handling
• Fast switching capability supported by low capacitance values
• Robust intrinsic body diode with fast reverse recovery characteristics
• High operating junction temperature capability up to 175°C

Single FETs, MOSFETs Applications

• Solar inverters
• Uninterruptible Power Supplies (UPS)
• Motor drivers
• High voltage DC/DC converters
• Switch mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'G' against Inventchip Technology official documentation to confirm compliance details or variant specifications. Ensure the procurement channel sources directly from authorized Inventchip distributors to guarantee component authenticity. Cross-reference the datasheet revision date (Mar. 2023) during design validation to ensure alignment with the latest technical parameters and package dimensions provided in the official specification sheet.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high efficiency at 650V levels where low conduction losses are critical. The TO-247-3 package facilitates effective thermal management via direct case mounting. Consider the 60mΩ on-resistance for load currents around 15A to 50A. Evaluate the switching energy figures against your target frequency and external gate resistance requirements to optimize electromagnetic interference and thermal performance within the system constraints.

Single FETs, MOSFETs Part Context

This part belongs to Inventchip Technology's Silicon Carbide discrete semiconductor product line. The company specializes in SiC power devices, gate driver ICs, and power management controllers. Founded in 2017 with headquarters in Shanghai, Inventchip operates its own SiC fabrication facility in Zhejiang Province, enabling vertical integration for these high-voltage power components.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Inventchip Technology directly for qualified alternative recommendations or cross-reference similar 650V SiC MOSFETs in the TO-247-3 package based on matching electrical and thermal parameters.

Single FETs, MOSFETs FAQ

What is the recommended gate drive voltage range for the IV1Q06060T3G?

The recommended turn-on voltage is 20±0.5V, and the recommended turn-off voltage is between -3.5V and -2V.

How does the on-resistance change with temperature?

The static drain-source on-resistance increases with temperature; it is typically 60mΩ at 25°C and rises to 80mΩ at 175°C under standard test conditions.

What is the maximum allowable soldering temperature?

The maximum solder temperature is 260°C, allowed only for wave soldering at the leads, specifically 1.6mm from the case, for a duration of 10 seconds.