IV2Q06040D7Z

Single FETs, MOSFETs Overview

The Inventchip IV2Q06040D7Z is a second-generation automotive-grade Silicon Carbide (SiC) MOSFET featuring a TO-263-7 package. It provides a drain-source voltage of 650V and a maximum on-resistance of 40mΩ at 25°C with VGS=18V and ID=20A. The device supports continuous drain currents of 60A at 25°C and 43A at 100°C, with pulsed current capability up to 150A. Total power dissipation reaches 249W at 25°C case temperature. Operating junction temperatures range from -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

• Second-generation SiC technology optimized for +15V to +18V gate drive
• Kelvin gate input configuration to simplify driver circuit design
• Ultra-fast and robust intrinsic body diode performance
• AEC-Q101 qualified for automotive reliability standards

Single FETs, MOSFETs Applications

• Electric vehicle chargers and onboard chargers (OBCs)
• Solar boosters
• Automotive compressor inverters
• AC/DC power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before integration. Confirm that the TO-263-7 footprint matches the target PCB layout requirements. Ensure thermal management solutions accommodate the specified junction-to-case resistance values under expected operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency applications requiring low switching losses and high blocking voltage. The Kelvin source connection aids in minimizing noise during fast switching transitions. Consider the thermal derating curves when designing for elevated ambient temperatures or limited cooling capacity.

Single FETs, MOSFETs Part Context

This part belongs to Inventchip’s Gen2 automotive SiC MOSFET portfolio. It utilizes advanced silicon carbide material properties to achieve superior thermal conductivity and breakdown strength compared to traditional silicon devices. The TO-263-7 package facilitates surface mounting while providing a large thermal pad for heat dissipation.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Evaluate alternative 650V SiC MOSFETs in the TO-263-7 package by comparing RDS(on), Qg, and thermal resistance specifications.