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IV2Q12030T4Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Inventchip. Its product description is GEN2, SIC MOSFET, 1200V 30MOHM,. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IV2Q12030T4Z
- Description：GEN2, SIC MOSFET, 1200V 30MOHM,
- Series：-
- Mfr：Inventchip
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：84A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：18V
- Rds On (Max) @ Id, Vgs：39mOhm @ 30A, 18V
- Vgs(th) (Max) @ Id：4.5V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs：135 nC @ 18 V
- Vgs (Max)：+20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds：3000 pF @ 800 V
- FET Feature：-
- Power Dissipation (Max)：395W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4
- Package / Case：TO-247-4
Single FETs, MOSFETs datasheet and documents for IV2Q12030T4Z
Single FETs, MOSFETs Overview
The IV2Q12030T4Z is a second-generation automotive-grade Silicon Carbide (SiC) MOSFET manufactured by Inventchip Technology. It features a planar-gate structure housed in a TO-247-4 package. Key electrical parameters include a drain-to-source voltage of 1200V, a typical on-resistance of 30mΩ at TC=25°C, and a continuous drain current of 79A. Additional characteristics include an output capacitance of 140pF and a reverse transfer capacitance of 7.7pF.
Single FETs, MOSFETs Feature Summary
- Second-generation planar-gate SiC technology optimized for automotive applications
- Low on-resistance enabling high-efficiency power conversion
- Automotive-grade reliability standards compliance
Single FETs, MOSFETs Applications
- On-board chargers
- DC-DC converters
- Traction inverters
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'T4Z' corresponds to the TO-247-4 package and automotive grade variant. Confirm datasheet version 1.0 specifications match your thermal design requirements. Ensure sourcing channels provide original manufacturer documentation to validate authenticity and traceability.
Single FETs, MOSFETs Selection Notes
Select this component for high-voltage, high-frequency applications requiring low conduction losses. The 1200V rating provides sufficient headroom for 800V battery systems. Consider thermal management due to the 79A current rating and 30mΩ resistance in compact designs.
Single FETs, MOSFETs Part Context
Inventchip Technology specializes in Silicon Carbide power devices and IC solutions. This part belongs to their Gen-2 SiC MOSFET lineup, designed to replace silicon-based counterparts in electric vehicle powertrains and industrial power supplies for improved efficiency.
Single FETs, MOSFETs Replacement Considerations
Check pinout compatibility with existing TO-247-4 footprints. Verify that gate charge and threshold voltage parameters align with current driver circuit capabilities before substitution.
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