IV2Q12040D7Z

$9.16

Description：GEN2, SIC MOSFET, 1200V 40MOHM,
Series：-
Mfr：Inventchip
Package：Tube

SKU:3c5c0ede30d7 Category: Single FETs, MOSFETs Brand: Inventchip

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Product introduction

IV2Q12040D7Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Inventchip. Its product description is GEN2, SIC MOSFET, 1200V 40MOHM,. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IV2Q12040D7Z

Description：GEN2, SIC MOSFET, 1200V 40MOHM,
Series：-
Mfr：Inventchip
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：52mOhm @ 20A, 18V
Vgs(th) (Max) @ Id：4.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs：110 nC @ 18 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：2160 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：417W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-263-7
Package / Case：TO-263-7

Single FETs, MOSFETs datasheet and documents for IV2Q12040D7Z

IV2Q12040D7Z

Single FETs, MOSFETs Overview

The IV2Q12040D7Z is a second-generation automotive-grade Silicon Carbide (SiC) MOSFET from Inventchip, designed for high-efficiency power conversion. It features a 1200V drain-source voltage and a maximum continuous drain current of 65A at 25°C case temperature. The device exhibits a low static on-resistance of 40mΩ typical value at VGS=18V and ID=20A. Operating with a recommended gate drive window of +15V to +18V, it supports junction temperatures up to 175°C. Packaged in a TO-263-7 format, the component integrates Kelvin gate connections to facilitate robust driver circuit design.

Single FETs, MOSFETs Feature Summary

Second-generation SiC technology optimized for +15V to +18V gate drive operation
AEC-Q101 qualified for automotive reliability standards
Ultra-fast and robust intrinsic body diode characteristics
Kelvin gate input configuration to simplify driver circuit implementation

Single FETs, MOSFETs Applications

Electric vehicle chargers and On-Board Chargers (OBCs)
Solar boosters
Automotive compressor inverters
AC/DC power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix D7Z against the manufacturer's official documentation to confirm package variation and assembly location details. Ensure that the procurement specifications align with the AEC-Q101 qualification requirements mandated for automotive applications. Cross-reference the thermal resistance parameters with the intended heatsinking solution to guarantee compliance with the 175°C maximum junction temperature rating under operational load conditions.

Single FETs, MOSFETs Selection Notes

Select this component when designing systems requiring high blocking voltage combined with low conduction losses. The device is suitable for applications demanding fast switching speeds and minimal reverse recovery charge. Consider the thermal management capabilities provided by the TO-263-7 package and the specified junction-to-case thermal resistance. Evaluate the gate drive requirements to ensure compatibility with the recommended +15V to +18V turn-on voltage range for optimal performance.

Single FETs, MOSFETs Part Context

This part belongs to Inventchip's Gen2 SiC MOSFET portfolio, targeting the automotive sector. The company specializes in Silicon Carbide power devices and gate driver ICs. The IV2Q12040D7Z represents an advancement in SiC technology, offering improved dynamic performance and thermal handling compared to previous generations, specifically engineered for rigorous automotive environments.