IV3Q12035D7Z

$8.52

Description：GEN3, SIC MOSFET, 1200V 35MOHM,
Series：-
Mfr：Inventchip
Package：Tube

SKU:03b77e15bcad Category: Single FETs, MOSFETs Brand: Inventchip

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Product introduction

IV3Q12035D7Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Inventchip. Its product description is GEN3, SIC MOSFET, 1200V 35MOHM,. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IV3Q12035D7Z

Description：GEN3, SIC MOSFET, 1200V 35MOHM,
Series：-
Mfr：Inventchip
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：46mOhm @ 30A, 18V
Vgs(th) (Max) @ Id：4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs：83 nC @ 18 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：2082 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：326W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-263-7
Package / Case：TO-263-7

Single FETs, MOSFETs datasheet and documents for IV3Q12035D7Z

IV3Q12035D7Z

Single FETs, MOSFETs Overview

The IV3Q12035D7Z is a third-generation Silicon Carbide (SiC) MOSFET designed for automotive applications. It features a drain-source voltage rating of 1200V and a typical on-resistance of 35mΩ at 25°C. The device utilizes Gen3 SiC technology to achieve high blocking voltage with low on-resistance, supporting gate drive voltages between +15V and +18V.

Single FETs, MOSFETs Feature Summary

Third-generation Silicon Carbide MOSFET technology
Automotive-grade reliability
High blocking voltage capability
Low on-resistance performance

Single FETs, MOSFETs Applications

Automotive power electronics systems

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffix when sourcing. Confirm that the component meets required automotive qualification standards. Check manufacturer documentation for exact thermal characteristics and gate drive waveform definitions to ensure proper integration into the target circuit design.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage automotive applications requiring low conduction losses. Ensure the system supports the specified +15V to +18V gate drive range. Evaluate thermal management requirements based on the 35mΩ on-resistance value and expected operating currents.

Single FETs, MOSFETs Part Context

Inventchip Technology specializes in Silicon Carbide power devices and IC solutions. This part belongs to their Gen3 SiC MOSFET lineup, which aims to provide high efficiency and reliability for demanding power conversion environments, particularly within the automotive sector.

Single FETs, MOSFETs Replacement Considerations

Consult official Inventchip documentation for confirmed substitute part numbers. Verify compatibility regarding pinout, voltage ratings, and thermal specifications before substituting.

Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.

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